NTE NTE5875, NTE5877, NTE5876, NTE5880, NTE5878 Datasheet
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NTE5810 & NTE5811,
NTE5870 thru NTE5891
Silicon Power Rectifier Diode, 12 Amp
Description:
The NTE5810, NTE5811, and NTE5870 through NTE5891 are low power general purpose rectifier
diodes in a DO4 type package designed for battery chargers, converters, power supplies, and machine tool controls.
Features:
D High Surge Current Capability
D High Voltage Available
D Designed for a Wide Range of Applications
D Available in Anode–to–Case or Cathode–to–Case Style
Ratings and Characteristics:
Average Forward Current (TC = +144°C Max), I
F(AV)
12A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Forward Surge Current, I
FSM
50Hz 230A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
60Hz 240A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Fusing Current, I2t
50Hz 260A2s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
60Hz 240A2s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Fusing Current, I2pt 3580A2ps. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Reverse Recovery Voltage Range, V
RRM
50 to 1200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Voltage Ratings: (TJ = +175°C)
NTE Type Number
V
RRM
–Max V
RSM
–Max VR–Max. V
R(SR)
IRM–Max
Cathode
to Case
Anode
to Case
Repetitive Peak
Reverse Volt.
(V)
Non–Repetitive Peak
Reverse Voltage
(V)
Direct Reverse
Voltage
(V)
Minimum Avalanche
Voltage
(V)
Reverse Current
Rated V
RRM
(mA)
5870 5871 50 75 50 – 12
5872 5873 100 150 100 – 12
5874 5875 200 275 200 – 12
5876 5877 300 385 300 – 12
5878 5879 400 500 400 500 12
5880 5881 500 613 50 626 12
5882 5883 600 725 600 750 12
5886 5887 800 950 800 950 12
5890 5891 1000 1200 1000 1150 12
5810 5811 1200 1400 1200 1350 12
Electrical Specifications:
Parameter Symbol Test Conditions Rating Unit
Maximum Average Forward Current I
F (AV)
180° sinusoidal condition, TC = +144°C Max 12 A
Maximum RMS Forward Current I
F(RMS)
19 A
Maximum Peak One–Cycle I
FSM
t = 10ms
Sinusoidal Half Wave,
225 A
Non–Repetitive Surge Current
t = 8.3ms
No voltage reapplied
235 A
t = 10ms
100% rated voltage reapplied,
265 A
t = 8.3ms
TJ = +175°C
280 A
Maximum I2t for Individual Device I2t
t = 10ms
100% rated voltage reapplied,
351 A2s
Fusing
t = 8.3ms
Initial TJ = +175°C
320 A2s
Maximum I2pt I2pt
t = 0.1 to 10ms, No voltage reapplied, Note 1 3511
A2pt
Maximum Peak Forward Voltage V
FM
IFM = 38A, TJ = +25°C 1.26 V
Maximum Value of Threshold
Voltage
V
M (TO)TJ
= +175°C 0.68 V
Maximum Value of Forward Slope
Resistance
r
t
TJ = +175°C 13.51 mΩ
Note 1. I2t for time tx = I2Ǩt S Ǩt
x
Thermal–Mechanical Specifications:
Parameter Symbol Test Conditions Rating Unit
Maximum Operation Junction Temperature T
J
–65 to + 175 °C
Maximum Storage Temperature T
stg
–65 to + 200 °C
Maximum Internal Thermal Resistance
Junction–to–Case
R
thJC
DC operation 2.0 K/W
Thermal Resistance, Case–to–Sink R
thCS
Mounting surface flat, smooth and
greased
0.5 K/W
Mounting Torque T Non–lubricated threads 1.2 – 1.5
(10.5 – 13.5)
m•N
(in•lb)
Approximate Weight wt 11 (0.25) g (oz)
.060 (1.52)
Dia Min
.405
(10.3)
Max
1.250 (31.75) Max
.437
(11.1)
Max
.175 (4.45) Max
.424 (10.8)
Dia Max
.250 (6.35) Max
.453
(11.5)
Max
10–32 NF–2A
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