NTE NTE5852, NTE5857, NTE5858, NTE5860, NTE5859 Datasheet
...
NTE5850 thru NTE5869
Silicon Power Rectifier Diode, 6 Amp
Description and Features:
The NTE5850 through NTE5869 are low power general purpose rectifier diodes in a DO4 type package designed for battery chargers, converters, power supplies, and machine tool controls.
Features:
D High Surge Current Capability
D High Voltage Available
D Designed for a Wide Range of Applications
D Available in Anode–to–Case or Cathode–to–Case Style
Ratings and Characteristics:
Average Forward Current (TC = +158°C Max), I
F(AV)
6A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Forward Surge Current, I
FSM
50Hz 134A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
60Hz 141A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Fusing Current, I2t
50Hz 90A2s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
60Hz 141A2s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Fusing Current, I2pt 1270A2ps. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Reverse Recovery Voltage Range, V
RRM
50 to 1000V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Voltage Ratings: (TJ = +175°C)
NTE Type Number
V
RRM
–Max V
RSM
–Max VR–Max. V
R(SR)
IRM–Max
Cathode
to Case
Anode
to Case
Repetitive Peak
Reverse Volt.
(V)
Non–Repetitive Peak
Reverse Voltage
(V)
Direct Reverse
Voltage
(V)
Minimum Avalanche
Voltage
(V)
Reverse Current
Rated V
RRM
(mA)
5850 5851 50 75 50 – 12
5852 5853 100 150 100 – 12
5854 5855 200 275 200 – 12
5856 5857 300 385 300 – 12
5858 5859 400 500 400 500 12
5860 5861 500 613 50 613 12
5862 5863 600 725 600 725 12
5866 5867 800 950 800 950 12
5868 5869 1000 1200 1000 1200 12
Electrical Specifications:
Parameter Symbol Test Conditions Rating Unit
Maximum Average Forward Current I
F (AV)
180° sinusoidal condition, TC = +158°C Max 6 A
Maximum RMS Forward Current I
F(RMS)
9.5 A
Maximum Peak One–Cycle I
FSM
t = 10ms
Sinusoidal Half Wave,
134 A
Non–Repetitive Surge Current
t = 8.3ms
No voltage reapplied
141 A
t = 10ms
100% rated voltage reapplied,
159 A
t = 8.3ms
TJ = +175°C
167 A
Maximum I2t for Individual Device I2t
t = 10ms
100% rated voltage reapplied,
127 A2s
Fusing
t = 8.3ms
Initial TJ = +175°C
116 A2s
Maximum I2pt I2pt
t = 0.1 to 10ms, No voltage reapplied, Note 1 1270
A2pt
Maximum Peak Forward Voltage V
FM
IFM = 19A, TJ = +25°C 1.10 V
Maximum Value of Threshold
Voltage
V
M (TO)TJ
= +175°C 0.60 V
Maximum Value of Forward Slope
Resistance
r
t
TJ = +175°C 17.2 mΩ
Note 1. I2t for time tx = I2Ǩt S Ǩt
x
Thermal–Mechanical Specifications:
Parameter Symbol Test Conditions Rating Unit
Maximum Operation Junction Temperature T
J
–65 to + 175 °C
Maximum Storage Temperature T
stg
–65 to + 200 °C
Maximum Internal Thermal Resistance
Junction–to–Case
R
thJC
DC operation 2.5 K/W
Thermal Resistance, Case–to–Sink R
thCS
Mounting surface flat, smooth and
greased
0.25 K/W
Mounting Torque T Non–lubricated threads 1.2 – 1.5
(10.5 – 13.5)
m•N
(in•lb)
Approximate Weight wt 11 (0.25) g (oz)
.060 (1.52)
Dia Min
.405
(10.3)
Max
1.250 (31.75) Max
.437
(11.1)
Max
.175 (4.45) Max
.424 (10.8)
Dia Max
.250 (6.35) Max
.453
(11.5)
Max
10–32 NF–2A
Loading...