NTE NTE5852, NTE5857, NTE5858, NTE5860, NTE5859 Datasheet

NTE5850 thru NTE5869

Silicon Power Rectifier Diode, 6 Amp

Description and Features:

The NTE5850 through NTE5869 are low power general purpose rectifier diodes in a DO4 type pack­age designed for battery chargers, converters, power supplies, and machine tool controls.

Features:

D High Surge Current Capability
D High Voltage Available
D Designed for a Wide Range of Applications
D Available in Anode–to–Case or Cathode–to–Case Style

Ratings and Characteristics:

Average Forward Current (TC = +158°C Max), I

F(AV)

6A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Maximum Forward Surge Current, I

FSM

50Hz 134A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

60Hz 141A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Fusing Current, I2t

50Hz 90A2s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

60Hz 141A2s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Fusing Current, I2pt 1270A2ps. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Maximum Reverse Recovery Voltage Range, V

RRM

50 to 1000V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Voltage Ratings: (TJ = +175°C)

NTE Type Number

V

RRM

–Max V

RSM

–Max VR–Max. V

R(SR)

IRM–Max

Cathode

to Case

Anode

to Case

Repetitive Peak

Reverse Volt.

(V)

Non–Repetitive Peak

Reverse Voltage

(V)

Direct Reverse

Voltage

(V)

Minimum Avalanche

Voltage

(V)

Reverse Current

Rated V

RRM

(mA)

5850 5851 50 75 50 – 12
5852 5853 100 150 100 – 12
5854 5855 200 275 200 – 12
5856 5857 300 385 300 – 12
5858 5859 400 500 400 500 12
5860 5861 500 613 50 613 12
5862 5863 600 725 600 725 12
5866 5867 800 950 800 950 12
5868 5869 1000 1200 1000 1200 12

Electrical Specifications:

Parameter Symbol Test Conditions Rating Unit

Maximum Average Forward Current I

F (AV)

180° sinusoidal condition, TC = +158°C Max 6 A

Maximum RMS Forward Current I

F(RMS)

9.5 A

Maximum Peak One–Cycle I

FSM

t = 10ms

Sinusoidal Half Wave,

134 A

Non–Repetitive Surge Current

t = 8.3ms

No voltage reapplied

141 A

t = 10ms

100% rated voltage reapplied,

159 A

t = 8.3ms

TJ = +175°C

167 A

Maximum I2t for Individual Device I2t

t = 10ms

100% rated voltage reapplied,

127 A2s

Fusing

t = 8.3ms

Initial TJ = +175°C

116 A2s

Maximum I2pt I2pt

t = 0.1 to 10ms, No voltage reapplied, Note 1 1270

A2pt

Maximum Peak Forward Voltage V

FM

IFM = 19A, TJ = +25°C 1.10 V

Maximum Value of Threshold

Voltage

V

M (TO)TJ

= +175°C 0.60 V

Maximum Value of Forward Slope

Resistance

r

t

TJ = +175°C 17.2 mΩ

Note 1. I2t for time tx = I2Ǩt S Ǩt

x

Thermal–Mechanical Specifications:

Parameter Symbol Test Conditions Rating Unit

Maximum Operation Junction Temperature T

J

–65 to + 175 °C

Maximum Storage Temperature T

stg

–65 to + 200 °C

Maximum Internal Thermal Resistance

Junction–to–Case

R

thJC

DC operation 2.5 K/W

Thermal Resistance, Case–to–Sink R

thCS

Mounting surface flat, smooth and
greased

0.25 K/W

Mounting Torque T Non–lubricated threads 1.2 – 1.5

(10.5 – 13.5)

m•N

(in•lb)

Approximate Weight wt 11 (0.25) g (oz)

.060 (1.52)

Dia Min

.405

(10.3)

Max

1.250 (31.75) Max

.437

(11.1)

Max

.175 (4.45) Max

.424 (10.8)

Dia Max

.250 (6.35) Max

.453

(11.5)

Max

10–32 NF–2A