NTE NTE584 Datasheet

NTE584

Silicon Schottky Diode

Description:

The NTE584 is a metal to silicon junction diode in a DO35 type package featuring high breakdown,
low turn–on voltage and ultrafast switching primarily intended for high level UHF/VHF detection and
pulse application with broad dynamic range.

Absolute Maximum Ratings: (Limiting Values)
Repetitive Peak Reverse Voltage, V

Forward Continuous Current (TA = +25°C, Note 1), I
Surge Non–Repetitive Forward Current (tp ≤ 1s, Note 1), I
Operating Junction Temperature Range, T
Storage Temperature Range, T

RRM

F

FSM

J

stg

Maximum Lead Temperature (During Soldering, 10s at 4mm from Case), T
Thermal Resistance, Junction–to–Ambient (Note 1), R

Θ

JA

Note 1. On infinite heat sink with 4mm lead length.

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

L

20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

35mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

100mA. . . . . . . . . . . . . . . . . . . . . . . . .

+230°C. . . . . . . . . . . .

400°C/W. . . . . . . . . . . . . . . . . . . . . . . . . .

Static Characteristic

Breakdown Voltage V
Forward Voltage V

Continuous Reverse Current I

Dynamic Characteristic

Overvoltage Coefficient C VR = 0V, f = 1MHz – – 1.2 pF
Minority Carrier Life Time τ IF = 5mA, Krakauer Method – – 100 ps

(BR)IR

F

R

= 10µA 20 – – V
IF = 1mA, Note 2 – – 0.41 V
IF = 35mA, Note 2 – – 1.0 V
VR = 15V, Note 2 – – 0.1 µA

Note 2. Pulse Test: Pulse width ≤ 300µs, Duty Cycle < 2%.

1.000 (25.4)
Min

.022 (.509) Dia Max

Color Band Denotes Cathode

.200 (5.08)

Max

.090 (2.28)

Dia Max