NTE NTE583 Datasheet

NTE583

Silicon Rectifier Diode

Schottky, RF Switch

Description:

The NTE583 is a metal to silicon junction diode featuring high breakdown, low turn–on voltage and
ultrafast switching. This device is primarly intented for high level UHF/VHF detection and pulse appli­cation with broad dynamic range.

Absolute Maximum Ratings: (TA = +25°C, Limiting Values)
Repetitive Peak Reverse Voltage, V

Forward Continuous Current (Figure 1), I

RRM

F

Surge Non–Repetitive Forward Current (tp ≤ 1s, Figure 1), I
Operating Junction Temperature Range, T
Storage Temperature Range, T

stg

Thermal Resistance, Junction–to–Ambient (Figure 1), R

J

thJA

Figure 1

FSM

–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

70V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

15mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

50mA. . . . . . . . . . . . . . . . . . . . . . . .

400°C/W. . . . . . . . . . . . . . . . . . . . . . . .

* d = 4mm

dd

Infinite heat sinks

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Units
Static Characteristics

Breakdown Voltage V

(BR)IR

= 10µA 70 – – V

Continuous Forward Voltage VF(1) IF = 1mA – – 0.41 V

IF = 15mA – – 1 V

Continuous Reverse Current IR(1) VR = 50V – – 0.2 µA

Dynamic Characteristics

Small Signal Capacitance C VR = 0, f = 1MH

Z

– – 2 pF

Minority Carrier Life Time τ IF = 5mA, Krakauer Method – – 100 ps

Note 1. Pulse Test tp ≤ 300µs δ < 2%

1.000

(25.4)

Min

.022 (.509) Dia Max

Color Band Denotes Cathode

.200

(5.08)

Max

.090 (2.28)

Dia Max