NTE58 (NPN) & NTE59 (PNP)
Silicon Complementary Transistors
High Power Audio Output
Features:
D High Power Dissipation
D Wide Safe Operating Area
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Continuous Base Current, I
Total Device Dissipation (T
Junction Temperature, T
Storage Temperature Range, T
CBO
CEO
EBO
C
B
= +25°C), P
FL
J
stg
C
200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
17A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
200W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector–Emitter Breakdown Voltage V
Maximum Collector Cutoff Current I
Maximum Emitter Cutoff Current I
DC Forward Current Transfer Ratio h
Collector–Emitter Saturation Voltage V
Second Breakdown Collector Current I
Cutoff Frequency f
(TA = +25°C unless otherwise specified)
(BR)CEOIC
CBO
EBO
FE
CE(sat)IC
S/b
VCB = 200V, IE = 0 – – 0.1 mA
VEB = 6V, IC = 0 – – 0.1 mA
VCE = 4V, IC = 8A 20 – –
VCE = 100V, t = 1sec 1 – – A
VCE = 12V, IE = 1A – 20 – MHz
T
= 50mA 200 – – V
= 10A, IB = 1A – – 2.5 V
1.430 (36.32)
.961 (24.42)
BCE
.843
(21.42)
.788
(20.02)
Min
.215 (5.48) .118 (3.0)
.244 (6.2) Max
Collector connected to Tab