NTE NTE5726 Datasheet

NTE5726

Powerblock Module

Description:

The NTE5726 uses high voltage power thyristors/diodes and is electrically isolated from the metal
base, allowing common heatsinks and compact assemblies to be built. This device is intended for
general purpose applications such as battery chargers, welders and plating equipment and where
high voltage and high current are required.

Features

:

D High Voltage
D Electrically Isolated Base Plate
D 3000V

Isolating Voltage

RMS

D High Surge Capability
D Large Creepage Distances

Ratings and Characteristics

Average Forward Current (T
Maximum RMS On–State Current (As AC Switch), I
Maximum Repetitive Peak Reverse and Off–State Blocking Voltage, V
Maximum Non–Repetitive Peak Reverse Voltage, V
Maximum Peak Reverse and Off–State Leakage Current (T

:

= +85°C, 180° Conduction, Half Sine Wave), I

C

T(RMS)

RRM

RSM

= +125°C), I

J

F(AV)

, V

RRM

RMS Isolation Voltage (50Hz, Circuit to Base, All Terminals Shorted, t = 1s), V
Critical Rate of Rise of Off–State Voltage (T

(Linear to 80% Rated V
(Linear to 67% Rated V

) 500V/µs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

DRM

) 1000V/µs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

DRM

Operating Junction Temperature Range, T
Storage Temperature Range, T

stg

Thermal Resistance, Junction–to–Case (Per Junction, DC Operation), R
Thermal Resistance, Case–to–Sink (Per Module, Note 1), R

= +125°C), dv/dt

J

J

thJC

thCS

DRM

, I

DRM

ISO

160A. . . . . . . . . .

355A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1600V. . . . . . . .

1700V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

50mA. . . . . .

3000V. . . . . . . .

–40° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–40° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.170°C/W. . . . . . . . .

0.05°C/W. . . . . . . . . . . . . . . . . . . .

Note 1. Mounting surface flat, smooth and greased.

Electrical Specifications:

Parameter Symbol Test Conditions Rating Unit

Maximum Peak One–Cycle I

FSM

Non–Repetitive Surge Current

Maximum I2t for Fusing I2t

Maximum I2pt I2pt
Threshold Voltage, Low level V
Threshold Voltage, High level V
On–State Slope Resistance, Low Level r
On–State Slope Resistance, High Level r
Maximum On–State Voltage Drop V

Maximum Holding Current I
Maximum Latching Current I

Maximum Peak Gate Power P
Maximum Average Gate Power P
Maximum Peak Gate Current +I
Maximum Peak Negative Gate Voltage –V
Maximum Required DC Gate Trigger

T(TO)1TJ
T(TO)2TJ

t1
t2
TM

H

L

GM

G(AV)TJ

GM

GT

V

GT

Voltage to Trigger

Maximum Required DC Gate Trigger

I

GT

Current to Trigger

Maximum Gate Voltage that will not

V

GD

Trigger

Maximum Gate Current that will not

I

GD

Trigger

Maximum Rate of Rise of

di/dt TJ = +125°C, ITM = 400A, Rated V

Turned–On Current

Typical Delay Time t
Typical Rise Time t
Typical Turn–Off Time t

d

r

q

t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms

Sinusoidal Half Wave, 100% V

RRM

Reapplied, Initial TJ = +125°C
Sinusoidal Half Wave, No Voltage

Reapplied, Initial TJ = +125°C
Sinusoidal Half Wave, 100% V

RRM

Reapplied, Initial TJ = +125°C
Sinusoidal Half Wave, No Voltage

Reapplied, Initial TJ = +125°C

t = 0.1 to 10ms, no voltage reapplied 1310

= +125°C, (16.7% x π x I
= +125°C, (π x I

< I < 20 x π x I

T(AV)

TJ = +125°C, (16.7% x π x I
TJ = +125°C, (π x I
TJ = +125°C, ITM = π x I

Av. Power = V

T(TO)

< I < 20 x π x I

T(AV)

T(AV)

x I

T(AV)

< I < π x I

T(AV)

T(AV)

< I < π x I

T(AV)

T(AV)

, 180° Condition,

+ rt x (I

T(RMS)

T(AV)

) 1.12 V

T(AV)

) 0.86 mΩ

2

)

4300 A
4500 A
5100 A
5350 A

92.5 A2s

84.4 A2s

131.0 A2s

119.3 A2s
A2pt

) 0.88 V

) 1.20 mΩ

1.5 V

Anode Supply = 12V, Initial IT = 30A, TJ = +25°C 500 mA
Anode Supply = 12V, Resistive Load = 1Ω,

Gat Pulse: 10V, 100µs, T

= +25°C

J

300 mA

TJ = +125°C, tp ≤ 5ms 10 W

= +125°C, f = 50Hz 2.0 W
TJ = +125°C, tp ≤ 5ms 3.0 A
TJ = +125°C, tp ≤ 5ms 5.0 V
TJ = –40°C
TJ = +25°C

Anode Supply = 12V,
Resistive Load: RA = 1Ω

4.0 V

3.0 V
TJ = +1 25°C 2.0 V
TJ = –40°C
TJ = +25°C

Anode Supply = 12V,
Resistive Load: RA = 1Ω

350 mA

200 mA
TJ = +1 25°C 100 mA
TJ = +125°C, Rated V

TJ = +125°C, Rated V

TJ = +25°C, Gate Current = 1A diG/dt = 1A/µs,
VD = 0.67% V

DRM

TJ = +25°C, ITM = 300A, –dI/dt = 15A/µs, VR = 50V ,

Applied 0.3 V

DRM

Applied 10 mA

DRM

Applied 500 A/µs

DRM

1.0 µs

2.0 µs

50–150 µs

dV/dt = 20V/µs, Gate 0V, 100Ω