NTE NTE5705, NTE5703, NTE5702, NTE5700, NTE5701 Datasheet

NTE5700 thru NTE5705

Industrial Power Module

Description:

The NTE5700 through NTE5705 series of IntegratedPowerCircuits consist of powerthyristors and
power diodes configured in a single package. Applications include power supplies, control circuits
and battery chargers.

Features:

D Glass Passivated Junctions for Greater Reliability
D Electrically Isolated Base Plate
D High Dynamic Characteristics

Absolute Maximum Ratings:

Maximum Repetitive Peak Reverse Voltage (VS£ 0), V

RRM

1200V............................

Maximum Non--Repetitive Peak Reverse Voltage, V

RSM

1300V...............................

Maximum Repetitive Peak Off State Voltage Gate Open Circuit, V

DRM

1200V..................

Thermal and Mechanical

Characteristics:

Junction Operating Temperature Range, T

J

-- 40° to +125°C..................................

Storage Temperature Range, T

stg

-- 40° to +150°C..........................................

Maximum Internal Thermal Resistance, One Junction to Case, R

thJC

DC Operation 2.24K/W............................................................

Maximum Thermal Resistance, Base to Heatsink, R

thCS

Mounting Surface Smooth and Greased 0.10K/W.....................................

Mounting Torque, Base to Heatsink ±10% (Note 1), T 5Nm..................................

Approximate Weight, wt 58g (2.0oz)......................................................

Note 1. A mountingcompound is recommended and the torque should be checkedafter aperiod of

about 3 hours to allow for the spread of the compound.

Electrical Characteristics:

Parameter Symbol Test Conditions Rating Unit

Forward Conduction

Maximum DC Output Current I

O

TC=+85°C, Full Bridge Circuits
(NTE5700, NTE5701, NTE5702)

25 A

Maximum Average On--State

and Forward Current

I

T(AV)

I

F(AV)

180° Sine Wave Conduction Circuits
(All Types)

12.5 A

Maximum RMS Current I

RMS

180° Sine Wave Conduction Circuit
(NTE5702)

28 A

Maximum Peak, One--Cycle

I

TSM

10ms

100% V

RRM

Sinusoidal Half Wave,

300 A

Non--Repetitive On--State

or

8.3ms

Reapplied Initial TJ=TJMax

315 A

orForwardCurrentI

FSM

10ms

No Voltage

357 A

8.3ms

Reapplied

375 A

Maximum I2t for Fusing I2t

10ms

100% V

RRM

Initial TJ=TJMax

450 A2s

8.3ms

Reapplied

410 A2s

10ms

No Voltage

637 A2s

8.3ms

Reapplied

580 A2s
Maximum I2Öt for Fusing I2Öt t = 0.1 to 10ms, No Voltage Reapplied, Note 2 6365 A2Ös
Maximum Value of Threshold

Voltage

V

T(TO)

TJ= +125°C 0.82 V

Maximum Value of On--State

Slope Resistance

r

T

TJ= +125°C 12 mW

Maximum Peak On--State

V

TM

ITM= p xI

T(AV)

TJ=+25°C,

1.35 V

or Forward Voltage

V

FM

IFM= p xI

F(AV)

180° Condition

1.35 V

Maximum Non--Repetitive Rate

of Rise of Turned On Circuit

di/dt TJ= +125°C, from 0.67V

DRM,ITM

= p xI

T(A V)

,

I

g

= 500mA, tr<0.5ms, tp>6ms

200 A/ms

Maximum Holding Current I

H

TJ=+25°C, Anode Supply = 6V,
Resistive Load, Gate Open Circuit

100 mA

Maximum Latching Current I

L

TJ=+25°C, Anode Supply = 6V,
Resistive Load

250 mA

Triggering

Maximum Peak Gate Power P

GM

8.0 W

Maximum Average Gate Power P

G(AV)

2.0 W

Maximum Peak Gate Current I

GM

2.0 A

Maximum Peak Negative Gate

Voltage

-- V

GM

10 V

Maximum Gate Voltage Required

V

GT

TJ=--40°C

Anode Supply = 6V

3.0 V

to Trigger

TJ=+25°C

Resistive Load

2.0 V

TJ= +125°C 1.0 V