NTE NTE5705, NTE5703, NTE5702, NTE5700, NTE5701 Datasheet
NTE5700 thru NTE5705
Industrial Power Module
Description:
The NTE5700 through NTE5705 series of IntegratedPowerCircuits consist of powerthyristors and
power diodes configured in a single package. Applications include power supplies, control circuits
and battery chargers.
Features:
D Glass Passivated Junctions for Greater Reliability
D Electrically Isolated Base Plate
D High Dynamic Characteristics
Absolute Maximum Ratings:
Maximum Repetitive Peak Reverse Voltage (VS£ 0), V
RRM
1200V............................
Maximum Non--Repetitive Peak Reverse Voltage, V
RSM
1300V...............................
Maximum Repetitive Peak Off State Voltage Gate Open Circuit, V
DRM
1200V..................
Thermal and Mechanical
Characteristics:
Junction Operating Temperature Range, T
J
-- 40° to +125°C..................................
Storage Temperature Range, T
stg
-- 40° to +150°C..........................................
Maximum Internal Thermal Resistance, One Junction to Case, R
thJC
DC Operation 2.24K/W............................................................
Maximum Thermal Resistance, Base to Heatsink, R
thCS
Mounting Surface Smooth and Greased 0.10K/W.....................................
Mounting Torque, Base to Heatsink ±10% (Note 1), T 5Nm..................................
Approximate Weight, wt 58g (2.0oz)......................................................
Note 1. A mountingcompound is recommended and the torque should be checkedafter aperiod of
about 3 hours to allow for the spread of the compound.
Electrical Characteristics:
Parameter Symbol Test Conditions Rating Unit
Forward Conduction
Maximum DC Output Current I
O
TC=+85°C, Full Bridge Circuits
(NTE5700, NTE5701, NTE5702)
25 A
Maximum Average On--State
and Forward Current
I
T(AV)
I
F(AV)
180° Sine Wave Conduction Circuits
(All Types)
12.5 A
Maximum RMS Current I
RMS
180° Sine Wave Conduction Circuit
(NTE5702)
28 A
Maximum Peak, One--Cycle
I
TSM
10ms
100% V
RRM
Sinusoidal Half Wave,
300 A
Non--Repetitive On--State
or
8.3ms
Reapplied Initial TJ=TJMax
315 A
orForwardCurrentI
FSM
10ms
No Voltage
357 A
8.3ms
Reapplied
375 A
Maximum I2t for Fusing I2t
10ms
100% V
RRM
Initial TJ=TJMax
450 A2s
8.3ms
Reapplied
410 A2s
10ms
No Voltage
637 A2s
8.3ms
Reapplied
580 A2s
Maximum I2Öt for Fusing I2Öt t = 0.1 to 10ms, No Voltage Reapplied, Note 2 6365 A2Ös
Maximum Value of Threshold
Voltage
V
T(TO)
TJ= +125°C 0.82 V
Maximum Value of On--State
Slope Resistance
r
T
TJ= +125°C 12 mW
Maximum Peak On--State
V
TM
ITM= p xI
T(AV)
TJ=+25°C,
1.35 V
or Forward Voltage
V
FM
IFM= p xI
F(AV)
180° Condition
1.35 V
Maximum Non--Repetitive Rate
of Rise of Turned On Circuit
di/dt TJ= +125°C, from 0.67V
DRM,ITM
= p xI
T(A V)
,
I
g
= 500mA, tr<0.5ms, tp>6ms
200 A/ms
Maximum Holding Current I
H
TJ=+25°C, Anode Supply = 6V,
Resistive Load, Gate Open Circuit
100 mA
Maximum Latching Current I
L
TJ=+25°C, Anode Supply = 6V,
Resistive Load
250 mA
Triggering
Maximum Peak Gate Power P
GM
8.0 W
Maximum Average Gate Power P
G(AV)
2.0 W
Maximum Peak Gate Current I
GM
2.0 A
Maximum Peak Negative Gate
Voltage
-- V
GM
10 V
Maximum Gate Voltage Required
V
GT
TJ=--40°C
Anode Supply = 6V
3.0 V
to Trigger
TJ=+25°C
Resistive Load
2.0 V
TJ= +125°C 1.0 V
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