NTE NTE570 Datasheet

NTE570

Silicon Controlled Avalanche Diode

Absolute Maximum Ratings:

Peak Reverse Voltage, V
Allowable Avalanche Current (Square Wave Single Pulse 100µs), I
Operating Junction Temperature Range, T
Storage temperature Range, T

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

RM

ZSM

J

stg

130V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.0A. . . . . . . . . . . . . . . . . . .

–40° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–40° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Avalanche Voltage V
Reverse Current I
Reverse Current (High Temperature) I
Temperature Dependency of V

Z

1.070
(27.2)

.032 (0.83) Dia Max

R(H)

Min

Color Band Denotes Cathode

IZ = 1mA Instantaneous 135 – 180 V

Z

VR = 130V – – 10 µA

R

VR = 130V, TA = +100°C – – 50 µA

J IZ = 1mA – 0.15 – V/°C

.291
(7.4)
Max

.165 (4.2)

Dia Max