NTE NTE5699 Datasheet
NTE5699
TRIAC – 800VRM, 25A
TO220 Full Pack
Description:
The NTE5699 TRIAC is designed primarily for full–wave AC control applications, such as lighting systems, heater controls, motor controls, and power supplies; or wherever full wave silicon gate controlled solid state devices are needed. TRIAC type thyristors switch from a blocking to a conducting
state for either polarity of applied voltage with positive or negative gate triggering.
Features:
D Blocking Voltage – 800 Volts
D All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability
D Small, Rugged, TO220 Full Pack for Low Thermal Resistance, High Heat Dissipation, and Durability
D Gate Triggering Guaranteed in Four Modes
Absolute Maximum Ratings:
Peak Repetitive Off–State Voltage, V
(TJ = –40° to +125°C, 1/2 Sine Wave 50 to 60HZ, Gate Open, Note 1) 800V. . . . . . . . . . . . .
Peak Gate Voltage (t ≤ 2µs), V
On–State Current RMS, I
GM
T(RMS)
(TC = +80°C, Full Cycle Sine Wave 50 to 60HZ, Note 2 ) 25A. . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Non–Repetitive Surge Current, I
(One Full Cycle, 60Hz, TC = +125°C, Preceded and followed by rated current) 250A. . . . . .
Peak Gate Power (t ≤ 2µs), P
GM
Average Gate Power (TC = +80°C, t ≤ 8.3ms), P
Peak Gate Current (t ≤ 2µs), I
GM
RMS Isolation Voltage (TA = +25°C, Relative Humidity ≤ 20%), V
Operating Junction Temperature Range, T
Storage Temperature Range, T
stg
Thermal Resistance, Junction–to–Case, R
Typical Thermal Resistance, Case–to–Sink, R
Thermal Resistance, Junction–to–Ambient, R
DRM
TSM
J
thJC
thCS
thJA
G(AV)
(ISO)
±10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
20W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
500mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1500V. . . . . . . . . . . . . . . . . . .
–40° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–40° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.8°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.2°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
60°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a
constant current source for blocking capability such that the voltage applied exceeds the
rated blocking voltage.
Note 2. The case temperature reference point for all TC measurements is a point on the center
lead of the package as close as possible to the plastic body.
Electrical Characteristics: (TC = +25°C and either polarity of MT2 to MT1, unless otherwise specified)
Characteristics Symbol Min Typ Max Unit
Peak Blocking Current
(Rated V
, Gate Open) TJ = +25°C
DRM
TJ = +125°C
Peak On–State Voltage
(ITM = 35A Peak; Peak Pulse Width ≤ 2ms,
Duty Cycle ≤ 2%)
Peak Gate Trigger Current
(Main Terminal Voltage = 12Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
Peak Gate Trigger Voltage
(Main Terminal Voltage = 12Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
(Main Terminal Voltage = Rated V
, RL = 10kΩ,
DRM
TJ = +110°C)
MT2(+), G(+); MT2(+), G(–); MT2(–), G(–)
MT2(–), G(+)
I
DRM
V
TM
I
GT
V
GT
–
–
–
–
10
2
– 1.4 1.85 V
–
–
–
–
–
–
–
–
0.2
0.2
20
20
20
30
1.1
1.1
1.1
1.3
0.4
0.4
50
50
50
75
2.0
2.0
2.0
2.5
–
–
µA
mA
mA
V
Holding Current
I
H
– 10 50 mA
(Main Terminal Voltage = 12Vdc, Gate Open
IT = 200mA)
Turn–On Time
(Rated V
, ITM = 35A, IG = 120mA)
DRM
Critical Rate of Rise of Off–State Voltage
(Rated V
, Exponential Waveform, TC = +125°C)
DRM
Critical Rate of Rise of Commutation Voltage
(Rated V
, ITM = 35A, Commutating di/dt = 13.4A/ms,
DRM
t
gt
– 1.5 – µs
dv/dt – 40 – V/µs
dv/dt(c) – 5 – V/µs
Gate Unenergized, TC = +80°C)
Note 1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a
constant current source for blocking capability such that the voltage applied exceeds the
rated blocking voltage.
Loading...