NTE NTE56024, NTE5697, NTE5695, NTE56026, NTE5693 Datasheet
NTE5693/NTE5695/NTE5697
NTE56022/NTE56024/NTE56026
TRIAC, 40 Amp
Description:
This NTE 40 Amp series medium power TRIACs are bi–directional triode thyristors which may be
switched from off–state to conduction for either polarity of applied voltage with positive or negative
gate triggering. These devices are designed for control of AC loads in applications such as lighting,
heating and motor speed control, as well as static switching relays. These devices are available in
a standard TO48 package (NTE5693, NTE5695, and NTE5697) or an Isolated TO48 package
NTE56022, NTE56024, and NTE56026).
Absolute Maximum Ratings:
Repetitive Peak Off–State Voltage (TJ = +100°C), V
NTE5693, NTE56022 200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5695, NTE56024 400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5697, NTE56026 600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DRM
Repetitive Peak Reverse Voltage (TJ = +100°C), V
RRM
NTE5693, NTE56022 200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5695, NTE56024 400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5697, NTE56026 600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS On–State Current (TC = +75°C, 360° Continuous), I
Peak Surge (Non–Repetitive) On–State Current, I
TSM
One–Cycle, 60Hz 400A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
One–Cycle, 50Hz 350A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Gate–Trigger Current (3µs Max), I
Peak Gate–Power Dissipation (IGT ≤ I
Average Gate–Power Dissipation, P
Operating Junction Temperature Range, T
GTM
for 3µs Max), P
GTM
G(AV)
opr
NTE56026 ONLY –65° to +110°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
NTE56026 ONLY –65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, R
thJC
NTE5693, NTE5695, NTE5697 1.8°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE56022, NTE56024 2.1°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE56026 1°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T(RMS)
GM
40A. . . . . . . . . . . . . . . . . . . . . . . . . .
12A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
40W. . . . . . . . . . . . . . . . . . . . . . . . . . .
750mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–40° to +100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–40° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (At Maximum Ratings and Indicated Case Temperatures unless otherwise
specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Peak Off–State Current I
DROM
Maximum On–State Voltage V
DC Holding Current I
Critical rate–of–Rise of Off–State
Voltage
HOLD
Critical
dv/dt
NTE5693, NTE56022
T
TJ = +100°C, Gate Open,
V
= Max Rating
DROM
– – 4 mA
TC = +25°C, IT = 100A (Peak) – – 2 V
TC = +25°C, Gate Open – – 60 mA
TC = +100°C, At V
DROM
,
Gate Open
– 200 – V/µs
NTE5695, NTE56024 – 150 – V/µs
NTE5697, NTE56026 – 100 – V/µs
Critical Rate–of–Rise of Commutation
Voltage
Commutating
dv/dt
TC = +75°C, Gate Unenergized,
v
D = V
DROM
, T = I
T(RMS)
,
3 – – V/µs
Commutating di/dt = 16A/ms
DC Gate–Trigger Current
(T2+, Gate+; T2–, Gate–) Quads I–II
I
GT
TC = +25°C, vD = 12VDC,
RL = 30Ω – – 50 mA
(T2+, Gate–; T2–, Gate+) Quads II–IV – – 80 mA
DC Gate–Trigger Voltage V
GT
TC = +25°C, vD = 12VDC,
– – 2.5 V
RL = 30Ω
Gate–Controlled Turn–On Time t
gt
TC = +25°C, vD = V
IGT = 300mA, tr = 0.1µs,
i
T = 10A
(Peak)
DROM
,
– 3 – µs
.562
(14.28)
Max
Gate
.1.193
(30.33)
Max
.453
(111.5)
Max
NTE5693, NTE5695, NTE5697 NTE56022, NTE56024, NTE56026
.562
(14.28)
Max
MT
1
MT
1
MT
2
Gate
1.260
(32.0)
Max
.595
(15.1)
.200 (5.08) Max
Max
.445
MT
2
(11.3)
Max
1/4–28 UNF–2A
(Isolated Stud)
1/4–28 UNF–2A
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