NTE NTE5661 Datasheet

NTE5661

TRIAC, 10 Amp

Description:

The NTE5661 is a TRIAC in a TO64 type stud mount package designed primarily for full–wave AC
control applications such as light dimmers, motor controls, heating controls, power supplies or wher­ever full–wave silicon gate controlled solid–state devices are needed. TRIAC type thyristors switch
from a blocking to a conducting state for either polarity of applied anode voltage with positive or nega­tive gate triggering.

Features:

D Low “ON” Voltage
D Gate Triggering Guaranteed in Four Modes

Absolute Maximum Ratings:

Repetitive Peak Off–State Voltage (TJ = +100°C, Note 1), V

DRM

On–State RMS Current (TC = +75°C), ITRMS 10A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak Surge Current (One Full Cycle, 60Hz, TJ = –40° to +100°C), I

TSM

Circuit Fusing Considerations (TJ = –40° to +100°C, t = 1.0 to 8.3ms), I2t 40A2sec. . . . . . . . . . . . . .

Peak Gate Power, P
Average Gate Power, P
Peak Gate Current, I
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R

GM

GM

G(AV)

stg

J

thJC

–40° to +100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–40° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

thJA

Stud Torque 15 in. lb.. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

50V. . . . . . . . . . . . . . . . . . . . . . . . . .

100A. . . . . . . . . . . . . . . . . .

10W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

2°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

50°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Note 1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant

current source for blocking capability such that the voltage applied exceeds the rated block­ing voltage.

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Peak Blocking Current (Either Direction) I
On–State Voltage (Either Direction) V
Gate Trigger Current, Continuous DC

All Modes

DRM

I

V

= 50V, TJ = +100°C, Gate Open – – 2.0 mA

DRM

TMITM

GT

= 14A Peak – 1.3 1.8 V

Main Terminal Voltage = 12V, RL = 100Ω – – 40 mA

MT2 (+), G (+); MT2 (–), G (–) – – 50 mA

Gate Trigger Voltage, Continuous DC V

V

Main Terminal Voltage = 12V, RL = 100Ω – 0.9 2.0 V

GT

Main Terminal Voltage = 50V, RL = 100Ω,

GD

0.2 – – V

TJ = +1 00°C

Holding Current (Either Direction) I

Main Terminal Voltage = 12V,

H

– – 30 mA

Gate Open, Initiating Current = 100mA
Turn–On Time t
Blocking Voltage Application Rate

dv/dt V

ITM = 14A, IGT = 100mA – 1.5 – µs

on

= 50V, TJ = +75°C, Gate Open – 5.0 – V/µs

DRM

at Commutation

.431

(10.98

Max

Gate

.855

(21.7)

Max

.453

(111.5)

Max

MT

1

.125 (3.17) Max

MT

2

10–32 UNF–2A