NTE NTE5655, NTE5657 Datasheet
NTE5655 thru NTE5657
TRIAC – 800mA
Sensitive Gate
Description:
The NTE5655 through NTE5657 are 800mA sensitive gate TRIACs in a TO92 type package designed
to be driven directly with IC and MOS devices. These TRIACs feature void–free glass passivated
chips.
These NTE devices are bi–directional triode thyristors and may be switched from off–state to conduction for either polarity of applied voltage with positive or negative gate trigger current. They are designed for control applications in lighting, heating, cooling and static switching relays.
Absolute Maximum Ratings:
Repetitive Peak Off–State Voltage (Gate Open, TJ = +100°C), V
NTE5655 200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5656 400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5657 600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS On–State Current (TC = +75°C, Conduction Angle of 360°C), I
Peak Surge (Non–Repetitive) On–State Current (One Cycle, 50Hz or 60Hz), I
Peak Gate–Trigger Current (3µs Max), I
Peak Gate–Power Dissipation (IGT ≤ I
Average Gate–Power Dissipation, P
Operating Temperature Range, T
Storage Temperature Range, T
J
stg
Typical Thermal Resistance, Junction–to–Case, R
GTM
for 3µs Max), P
GTM
G(AV)
GM
thJC
DRM
TRMS
TSM
800mA. . . . . . . . . . . . . . .
8A. . . . . . . . . . .
500mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
20W. . . . . . . . . . . . . . . . . . . . . . . . . . .
200mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–40° to +100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–40° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
75°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TC = +25°C, Maximum Ratings unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Peak Off–State Current I
Max. On–State Voltage V
DC Holding Current I
Critical Rate–of–Rise of Off–State Voltage Critical
DRM
dv/dt
V
= Max Rating, Gate Open,
DRM
TJ = +100°C
TMiT
H
= 800mA (Peak) – – 1.9 V
Gate Open – – 15 mA
VD = V
, Gate Open, TC = +1 00°C – 10 – V/µs
DRM
– 0.75 – mA
Electrical Characteristics (Cont’d): (TC = +25°C, Maximum Ratings unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
DC Gate Trigger Current
(+) Gate (+), T2 (–) Gate (–)
T
2
T
(+) Gate (–), T2 (–) Gate (+)
2
DC Gate Trigger Voltage V
Gate–Controlled Turn–On Time t
.210
(5.33)
Max
I
VD = 6V, RL = 100Ω – – 5 mA
GT
VD = 6V, RL = 100Ω – – 2.2 V
GT
VD = V
gt
iT = 10A (Peak)
, IGT = 80mA, tr = 0.1µs,
DRM
– 2.2 – µs
.135 (3.45) Min
Seating
Plane
.500
(12.7)
Min
.100 (2.54)
.105 (2.67) Max
MT
1
Gate
MT
2
.021 (.445) Dia Max
.050 (1.27)
.165 (4.2) Max
.205 (5.2) Max
.105 (2.67) Max
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