NTE NTE5653, NTE5651, NTE5650, NTE5652 Datasheet
NTE5650 thru NTE5653
TRIAC – 100VRM, 2.5A
Description:
The NTE5650 through NTE5653 sensitive gate TRIACs are designed to be driven directly with IC and
MOS devices. These devices features a void–free glass passivated chip and are hermetically sealed
in TO–5 outline cans.
The NTE5650 through NTE5653 are bi–directional triode thyristors and may be switched from off–
state to conduction for either polarity of applied voltage with positive or negative gate–trigger current
and are designed for control applications in lighting, heating, cooling and static switching relays.
Absolute Maximum Ratings:
Repetitive Peak Off–State Voltage (TJ = +90°C, Gate Open, Note 1), V
DROM
NTE5650 100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5651 200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5652 400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5653 600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS On–State Current (TC = +75°C and Conduction Angle of 360°), I
T(RMS)
3A. . . . . . . . . . . . . . .
Peak Surge (Non–Repetitive) On–State Current (One–Cycleat 50Hz or 60Hz), I
TSM
30A. . . . . . . .
Peak Gate–Trigger Current (3µsec, Max.), I
GTM
1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Gate–Power Dissipation (IGT ≤ I
GTM
for 3µsec. Max.), P
GM
20W. . . . . . . . . . . . . . . . . . . . . . . .
Average Gate–Power Dissipation, P
G(AV)
0.2W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range (TC), T
opr
–40° to +90°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
–40° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Typical Thermal Resistance, Junction–to–Case, R
thJC
4°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. All values apply in either direction.
Electrical Characteristics: (At Maximum Ratings & Specified Case Temperature)
Parameter Symbol Test Conditions Min Typ Max Unit
Peak Off–State Current I
DROM
TJ = +90°C, V
DROM
= Max Rating,
Gate Open, Note 1
– – 0.75 mA
Maximum On–State Voltage V
TM
TC = +25°C, iT = 5A (Peak), Note 1 – – 1.85 V
DC Holding Current I
HO
TC = +25°C, Gate Open – – 5 mA
Critical Rate–of–Rise of Off–State
Voltage
Critical
dv/dt
TC = +90°C, vD = V
DROM
, Gate Open,
Note 1
– 3 – V/µs
DC Gate–Trigger Current
MT2 (+) Gate (+), MT2 (–) Gate (–) I
GT
TC = + 25°C, vD = 6V, RL = 39Ω – – 3 mA
MT2 (+) Gate (–), MT2 (–) Gate (+)
Note 1. All values apply in either direction.
Electrical Characteristics (Cont’d): (At Maximum Ratings & Specified Case Temperature)
Parameter Symbol Test Conditions Min Typ Max Unit
DC Gate Trigger Voltage V
GT
TC = +25°C, vD = 6V, RL = 39Ω – – 2.2 V
Gate–Controlled Turn–On Time t
gt
TC = +25°C, vD = V
DROM
, IGT = 80mA,
tr = 0.1µs, iT = 10A (Peak)
– 2.2 – µs
Fusing Current (For TRIAC Protection) I2t T = 1.25 to 10ms – – 3 A2s
45°
.031 (.793)
.019 (0.5) Dia
MT
1
Gate
MT
2
.352 (8.95) Dia Max
.320 (98.13) Dia Max
.250 (6.35)
Max
1.500 (38.1)
Min
TO5
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