NTE NTE5643, NTE5641, NTE5640, NTE5642 Datasheet

NTE5640 thru NTE5643
TRIAC, 2.5A
Absolute Maximum Ratings:
Repetitive Peak Off–State Voltage (Gate Open, TJ = +100°C, Note 1), V
DROM
NTE5640 100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS On–State Current (T
C
= +75°C, Conduction Angle of 360°), I
T(RMS)
2.5A. . . . . . . . . . . . . . . . .
Peak Surge (Non–Repetitive) On–State Current (One Cycle, at 50Hz or 60Hz), I
TSM
30A. . . . . . . .
Peak Gate–Trigger Current (3µs Max), I
GTM
1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Gate–Power Dissipation (I
GT
I
GTM
for 3µs Max), P
GM
20W. . . . . . . . . . . . . . . . . . . . . . . . . . .
Average Gate–Power Dissipation, P
G(AV)
200mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Fusing Current (For TRIAC Protection, T = 1.25 to 10ms), I
2
t3A
2
s. . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, T
opr
–40° to +100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
–40° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Typical Thermal Resistance, Junction–to–Case, R
thJC
4°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. All values apply in either direction.
Electrical Characteristics:
(At Maximum Ratings and TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Peak Off–State Current I
DROMVDROM
= Max Rating, TJ = +100°C,
Gate Open, Note 1
0.75 mA
Maximum On–State Voltage V
TM
iT = 5A (Peak), Note 1 2.2 V
DC Holding Current I
H
Gate Open 15 mA
Critical Rate–of–Rise of Off–State Voltage Critical
dv/dt
vD = V
DROM
, TC = +100°C, Note 1 7 V/µs
DC Gate–Trigger Current I
GT
vD = 6V, RL = 39, All Quads 25 mA
DC Gate–Trigger Voltage V
GT
vD = 6V, RL = 39 2.2 V
Gate–Controlled Turn–On Time t
gt
vD = V
DROM
, IGT = 80mA, tr = 0.1µs,
i
T
= 10A (Peak)
2.2 µs
45°
.031 (.793)
.019 (0.5) Dia
MT
1
Gate MT
2
.352 (8.95) Dia Max
.320 (98.13) Dia Max
.250 (6.35)
Max
.500 (12.7)
Min
Loading...