NTE NTE5629 Datasheet
NTE5629
TRIAC – 400VRM, 4Amp
Description:
The NTE5629 TRIAC is a bi–directional triode thyristor in a TO202 type case. This device may be
switched from off–state to conduction for either polarity of applied voltage with positive or negative
gate–trigger current. The NTE5629 can be driven directly with IC and MOS devices and is designed
for control applications in lighting, heating, cooling, and static switching relays.
Absolute Maximum Ratings:
Repetitive Peak Off–State Voltage (Gate Open, TJ = +110°C, Note 1), V
RMS On–State Current (TC = +80°C, Conduction Angle = 360°), I
T(RMS)
DRM
Non–Repetitive Peak Surge On–State Current (One–Cycle, at 50Hz or 60Hz), I
Peak Gate–Trigger Current (for 3µs Max), I
Peak Gate–Power Dissipation (IGT ≤ I
Average Gate–Power Dissipation, P
Operating Temperature Range, T
Storage Temperature Range, T
G(AV)
opr
stg
Thermal Resistance, Junction–to–Case, R
GTM
GTM
), P
thJC
GM
TSM
–40° to +110°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–40° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
400V. . . . . . . . . . . . . .
4A. . . . . . . . . . . . . . . . . . .
40A. . . . . . . .
1.2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
15W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4°C/W T yp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (At Specified Case Temperature)
Peak Off–State Current (Gate Open, TC = +110°C, V
Maximum On–State Voltage (TC = +25°C, IT = 4A, Note 1), V
DC Holding Current (Gate Open, TC = +25°C, Note 1), I
= 400V, Note 1), I
DRM
TM
Hold
Critical Rate–of–Rise of Off–State Voltage, Critical dv/dt
(VD = 400V, Gate Open, TC = +110°C, Note 1) 10V/µs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Critical rate–of–Rise of commutation Voltage, Commutating dv/dt
(VD = 400V, IT = 4A, Gate Unenergized, TC = +80°C, Note 1) 1V/µs. . . . . . . . . . . . . . . . . . . .
DC Gate–Trigger Current (VD = 12VDC, RL = 60Ω, TC = +25°C), I
(T2+ Gate +, T2– Gate –) Quads I and III
(T2+ Gate –, T2– Gate +) Quads II and IV
DC Gate–Trigger Voltage (VD = 12VDC, RL = 60Ω, TC = +25°C), V
Gate–Controlled Turn–On Time, T
gt
(VD = 400V, IGT = 80mA, tR = 0.1µs, IT = 6A (Peak), TC = +25°C) 3µs. . . . . . . . . . . . . . . . . . .
Note 1. All values apply in either direction.
GT
GT
DRM
0.5mA Max. . . . .
1.6V Max. . . . . . . . . . . . . . . . . . . . .
5mA Max. . . . . . . . . . . . . . . . . . . . . . . .
3mA Max. . . . . . . . . . . . . . . . .
2V Max. . . . . . . . . . . . . . . . . .
.380 (9.56) .180 (4.57)
1.200
(30.48)
Ref
.500
(12.7)
.300
(7.62)
.400
(10.16)
Min
MT
2
.132 (3.35) Dia
.325
(9.52)
.070 (1.78) x 45°
Chamf
.050 (1.27)
MT
2
MT
1
Gate
.100 (2.54) .100 (2.54)
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