NTE NTE53 Datasheet

NTE53

Silicon NPN Transistor

High Voltage, High Speed Switch

Description:

The NTE52 is a silicon NPN transistor in a TO3 type package designed for high voltage, high–speed
power switching in inductive circuits where fall time is critical. This device is particularly suited for
115V and 220V line–operated switch–mode appliations.

Applications:

D Switching Regulators
D PWM Inverters and Motor Controls
D Deflection Circuits
D Solenoid and Relay Drivers

Absolute Maximum Ratings:

Collector–Emitter Voltage, V
Collector–Emitter Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I

C

CEO(sus)
CEX(sus)
CEV

EB

Continuous 15A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak (Note 1) 30A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Base Current, I

B

Continuous 10A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak (Note 1) 20A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Device Dissipation (T

= +25°C), P

C

D

Derate Above 25°C 1.0W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Device Dissipation (T
Operating Junction Temperatur Range, T
Storage Temperatur Range, T
Thermal Resistance, Junction–to–Case, R

= +100°C), P

C

stg

D

J

thJC

Maximum Lead temperature (During Soldering, 1/8” from case, 5sec), T

–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

L

400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

450V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

850V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

9V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

175W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

100W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.0°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+275°C. . . . . . . . . . . . . . .

Note 1. Pulse test: Pulse Width = 5ms, Duty Cycle ≤ 10%.

Electrical Charactetristics: (TC = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics (Note 2)

Collector–Emitter Sustaining Voltage V

Collector Cutoff Current I

Emitter Cutoff Current I

CEO(sus)IC

V

CEX(sus)IC

CEV

I

CER
EBO

Second Breakdown

Second Breakdown Collector

I

S/b

Current with Base Forward Bias
ON Characteristics (Note 2)
DC Current Gain h

Collector–Emitter Saturation Voltage V

Base–Emitter Saturation Voltage V

FE

CE(sat)IC

BE(sat)IC

Dynamic Characteristics

Current Gain–Bandwidth Product f
Output Capacitance C

T
ob

Switching Characteristics (Resistive Load)
Delay Time t
Rise Time t
Storage Time t
Fall Time t

d

r

s

f

Switching Characteristics (Inductive Load, Clamped)
Storage Time t
Fall Time t
Storage Time t
Fall Time t

sv

fi

sv

fi

= 100mA, IB = 0 400 – – V

= 8A, V
IC = 15A, V
V

= 850V, V

CEV

V

= 850V, V

CEV

T

= +100°C

C

= 450V, TC = +100°C 450 – – V

clamp

= 300V, TC = +100°C 300 – – V

clamp

= 1.5V – – 1.0 mA

BE(off)

= 1.5V,

BE(off)

VCE = 850V, RBE = 50Ω, TC = +100°C – – 5.0 mA
VEB = 9V, IC = 0 – – 1.0 mA

VCE = 100V, t = 1.0s (non–repetitive) 0.2 – – A

VCE = 2V, IC = 5A 12 – 60
VCE = 2V, IC = 10A 6 – 30

= 10A, IB = 2A – – 1.5 V
IC = 10A, IB = 2A, TC = +100°C – – 2.5 V
IC = 15A, IB = 3A – – 5.0 V

= 10A, IB = 2A – – 1.6 V
IC = 10A, IB = 2A, TC = +100°C – – 1.6 V

VCE = 10V, IC = 500mA, f = 1MHz 6 – 28 MHz
VCB = 10V, IE = 0, f = 1MHz 125 – 500 pF

VCC = 250V, IC = 10A, IB1 = IB2 =2A,
tp = 300µs, Duty Cycle ≤ 2%

IC = 10A peak, V
V

= 5V

BE(off)

IC = 10A peak, V
V

= 5V, TJ = +100°C

BE(off)

= 450V, IB1 = 2A,

clamp

= 450V, IB1 = 2A,

clamp

– – 4.0 mA

– – 0.05 µs
– – 1.0 µs
– – 4.0 µs
– – 0.7 µs

– 2.0 – µs

0.09 – – µs
– – 5.0 µs
– – 1.5 µs

Note 2. Pulse test: Pulse Width = 300µs, Duty Cycle ≤ 2%.