NTE NTE52 Datasheet

NTE52
Silicon NPN Transistor
High Voltage, High Speed Switch
Description:
The NTE52 is a silicon NPN transistor in a TO3 type package designed for high voltage, high–speed power switching in inductive circuits where fall time is critical. This device is particularly suited for line–operated switch–mode appliations.
Applications:
Features:
D Fast Turn–Off Times:
100ns Inductive Fall Time @ +25°C (Typ) 150ns Inductive Crossover Time @ +25°C (Typ) 400ns Inductive Storage Time @ +25°C (Typ)
D Operating Temperature Range: –65° to +200°C
Absolute Maximum Ratings:
Collector–Emitter Voltage, V Collector–Emitter Voltage, V Emitter–Base Voltage, V Collector Current, I
C
CEO(sus) CEV
EB
Continuous 5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1) 8A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
Continuous 2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1) 4A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
= +25°C), P
C
D
Derate Above 25°C 0.714W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T Operating Junction Temperatur Range, T Storage Temperatur Range, T Thermal Resistance, Junction–to–Case, R
= +100°C), P
C
stg
D
J
thJC
Maximum Lead temperature (During Soldering, 1/8” from case, 5sec), T Note 1. Pulse test: Pulse Width = 5ms, Duty Cycle 10%.
450V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
750V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
125W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
71.5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.4°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
L
+275°C. . . . . . . . . . . . . . .
Electrical Charactetristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics (Note 2)
Collector–Emitter Sustaining Voltage V Collector Cutoff Current I
Emitter Cutoff Current I
CEO(sus)IC
CEV
I
CER EBO
ON Characteristics (Note 2) DC Current Gain h Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
FE
CE(sat)IC
BE(sat)IC
Dynamic Characteristics
Output Capacitance C
ob
Switching Characteristics (Resistive Load) Delay Time t Rise Time t Storage Time t Fall Time t
d
r
s
f
Switching Characteristics (Inductive Load, Clamped) Storage Time t Crossover Time t Fall Time t Storage Time t Crossover Time t Fall Time t
sv
c fi
sv
c fi
= 100mA, IB = 0 450 V
V
= 750V, V
CEV
V
= 750V, V
CEV
= +100°C
T
C
V
= 750V, RBE = 50Ω, TC = +100°C 3.0 mA
CEV
= 1.5V 0.5 mA
BE(off)
= 1.5V,
BE(off)
VEB = 6V, IC = 0 1.0 mA
VCE = 5V, IC = 3A 8
= 3A, IB = 0.6A 1.0 V IC = 3A, IB = 0.6A, TC = +100°C 2.0 V IC = 5A, IB = 1A 3.0 V
= 3A, IB = 0.6A 1.5 V IC = 3A, IB = 0.6A, TC = +100°C 1.5 V
VCB = 10V, IE = 0, f = 1kHz 250 pF
VCC = 250V, IC = 3A, IB1 = 0.4A, V
= 5V, tp = 300µs,
BE(off)
Duty Cycle 2%
Duty Cycle ≤ 2%
IC = 3A pea k, V V
= 5V
BE(off)
IC = 3A pea k, V V
= 5V, TJ = +100°C
BE(off)
= 250V, IB1 = 0.4A,
clamp
= 250V, IB1 = 0.4A,
clamp
2.5 mA
0.03 0.05 µs 0.10 1.40 µs 0.40 0.50 µs 0.175 0.500 µs
0.40 µs 0.15 µs 0.10 µs 0.70 2.0 µs 0.28 0.50 µs 0.15 0.30 µs
Note 2. Pulse test: Pulse Width = 300µs, Duty Cycle ≤ 2%.
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