NTE NTE52 Datasheet

NTE52

Silicon NPN Transistor

High Voltage, High Speed Switch

Description:

The NTE52 is a silicon NPN transistor in a TO3 type package designed for high voltage, high–speed
power switching in inductive circuits where fall time is critical. This device is particularly suited for
line–operated switch–mode appliations.

Applications:

D Switching Regulators
D Motor Controls
D Inverters
D Solenoid and Relay Drivers

Features:

D Fast Turn–Off Times:

100ns Inductive Fall Time @ +25°C (Typ)
150ns Inductive Crossover Time @ +25°C (Typ)
400ns Inductive Storage Time @ +25°C (Typ)

D Operating Temperature Range: –65° to +200°C

Absolute Maximum Ratings:

Collector–Emitter Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I

C

CEO(sus)
CEV

EB

Continuous 5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak (Note 1) 8A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Base Current, I

B

Continuous 2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak (Note 1) 4A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Device Dissipation (T

= +25°C), P

C

D

Derate Above 25°C 0.714W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Device Dissipation (T
Operating Junction Temperatur Range, T
Storage Temperatur Range, T
Thermal Resistance, Junction–to–Case, R

= +100°C), P

C

stg

D

J

thJC

Maximum Lead temperature (During Soldering, 1/8” from case, 5sec), T
Note 1. Pulse test: Pulse Width = 5ms, Duty Cycle ≤ 10%.

450V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

750V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

125W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

71.5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.4°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

L

+275°C. . . . . . . . . . . . . . .

Electrical Charactetristics: (TC = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics (Note 2)

Collector–Emitter Sustaining Voltage V
Collector Cutoff Current I

Emitter Cutoff Current I

CEO(sus)IC

CEV

I

CER
EBO

ON Characteristics (Note 2)
DC Current Gain h
Collector–Emitter Saturation Voltage V

Base–Emitter Saturation Voltage V

FE

CE(sat)IC

BE(sat)IC

Dynamic Characteristics

Output Capacitance C

ob

Switching Characteristics (Resistive Load)
Delay Time t
Rise Time t
Storage Time t
Fall Time t

d

r

s

f

Switching Characteristics (Inductive Load, Clamped)
Storage Time t
Crossover Time t
Fall Time t
Storage Time t
Crossover Time t
Fall Time t

sv

c
fi

sv

c
fi

= 100mA, IB = 0 450 – – V

V

= 750V, V

CEV

V

= 750V, V

CEV

= +100°C

T

C

V

= 750V, RBE = 50Ω, TC = +100°C – – 3.0 mA

CEV

= 1.5V – – 0.5 mA

BE(off)

= 1.5V,

BE(off)

VEB = 6V, IC = 0 – – 1.0 mA

VCE = 5V, IC = 3A 8 – –

= 3A, IB = 0.6A – – 1.0 V
IC = 3A, IB = 0.6A, TC = +100°C – – 2.0 V
IC = 5A, IB = 1A – – 3.0 V

= 3A, IB = 0.6A – – 1.5 V
IC = 3A, IB = 0.6A, TC = +100°C – – 1.5 V

VCB = 10V, IE = 0, f = 1kHz – – 250 pF

VCC = 250V, IC = 3A, IB1 = 0.4A,
V

= 5V, tp = 300µs,

BE(off)

Duty Cycle ≤ 2%

Duty Cycle ≤ 2%

IC = 3A pea k, V
V

= 5V

BE(off)

IC = 3A pea k, V
V

= 5V, TJ = +100°C

BE(off)

= 250V, IB1 = 0.4A,

clamp

= 250V, IB1 = 0.4A,

clamp

– – 2.5 mA

– 0.03 0.05 µs
– 0.10 1.40 µs
– 0.40 0.50 µs
– 0.175 0.500 µs

– 0.40 – µs
– 0.15 – µs
– 0.10 – µs
– 0.70 2.0 µs
– 0.28 0.50 µs
– 0.15 0.30 µs

Note 2. Pulse test: Pulse Width = 300µs, Duty Cycle ≤ 2%.