NTE NTE51 Datasheet

NTE51

Silicon NPN Transistor

High Voltage, High Speed Switch

Description:

The NTE51 is a silicon NPN transistor in a TO220 type package designed for high–voltage, high–
speed power switching inductive circuits where fall time is critical. This device is particularly suited
for 115V and 220V SWITCHMODE applications such as switching regulators, Inverters, motor con­trols, solenoid/relay drivers and deflection circuits.

Features:

D Reverse Bias SOA with Inductive Loads @ TC = +100°C
D 700V Blocking Capability

Absolute Maximum Ratings:

Collector–Emitter Voltage, V
Collector–Emitter Voltage, V
Emitter Base Voltage, V
Collector Current,I

C

CEO(sus)
CEV

EBO

Continuous 4A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak (Note 1) 8A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Base Current, I

B

Continuous 2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak (Note 1) 4A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Emitter Current, I

E

Continuous 6A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak (Note 1) 12A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Power Dissipation (T

= +25°C), P

A

D

Derate above 25°C 16mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Power Dissipation (T

= +25°C), P

C

D

Derate above 25°C 600mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature Range, T
Storage Temperature Range, T

stg

Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R
Lead Temperature (During Soldering, 1/8” from case, 5sec), T

J

thJC

thJA

L

Electrical Characteristics: (TC = +25°C unless otherwise Specified)

–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

700V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

9V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

2W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

75W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.67°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

62.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+275°C. . . . . . . . . . . . . . . . . . . . . . .

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics (Note 1)

Collector–Emitter Sustaining Voltage V
Collector Cutoff Current I

Emitter Cutoff Current I

CEO(sus)Ic

CEV

EBO

= 10mA, IB = 0 400 – – V

V

= 700V, V

CEV

V

= 700V, V

CEV

T

= +100°C

C

VEB = 9V, Ic = 0 – – 1 mA

= 1.5V – – 1 mA

BE(off)

= 1.5V,

BE(off)

Note 1. Pulse test: Pulse Width = 300µs, Duty Cycle = 2%.

– – 1 mA

Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise Specified)

Parameter Symbol Test Conditions Min Typ Max Unit

ON Characteristics (Note 1)

DC Current Gain h

Collector–Emitter Saturation Voltage V

FE

CE(sat)IC

Dynamics Characteristics

Current Gain–Bandwidth Product f
Output Capacitance C

T
ob

Switching Characteristics (Resistive Load)
Delay Time t

d

Rise Time t
Storage Time t

s

Fall Time t
Switching Characteristics (Inductive Load, Clamped)
Voltage Storage Time t
Crossover Time t
Fall Time t

sv

c
fi

VCE = 5V, IC = 1A 10 – 60
VCE = 5V, IC = 2A 8 – 40

= 1A, IB = 0.2A – – 0.5 V
IC = 2A, IB = 0.5A – – 0.6 V
IC = 2A, IB = 0.5A, TC = +100°C – – 1.0 V
IC = 4A, IB = 1A – – 1.0 V

VCE = 10V, IC = 500mA, f = 1MHz 4 – – MHz
VCB = 10V, IE = 0, f = 0.1MHz – 65 – pF

VCC = 125V, IC = 2A, IB1 = IB2 = 0.4A,
tp = 25µs, Duty Cycle ≤ 1%

r

f

V

= 300V, IB1 = 0.4A,

clamp

V

BE(off)

= 5V

– 0.025 0.1 µs
– 0.3 0.7 µs
– 1.7 4.0 µs
– 0.4 0.9 µs

– 0.9 4.0 µs
– 0.32 0.9 µs
– 0.16 – µs

Note 1. Pulse test: Pulse Width = 300µs, Duty Cycle = 2%.

.420 (10.67)

Max

.147 (3.75)

Dia Max

.250 (6.35)

Max

.070 (1.78) Max

Base

.100 (2.54)

.110 (2.79)

.500

(12.7)

Max

.500

(12.7)

Min

Emitter
Collector/Tab