NTE NTE507 Datasheet

NTE507

Silicon Rectifier Diode

Description:

The NTE507 is a silicon rectifier diode designed for special applications such as DC power supplies,
inverters, converters, ultrasonic systems, choppers, low RF interference and free wheeling diodes.
This device has a typical recovery time of 150 nanoseconds providing high efficiency at frequencies
to 250kHz.

Absolute Maximum Ratings:

Peak Repetitive Reverse Voltage, V
Working Peak Reverse Voltage, V

RRM

RWM

DC Blocking Voltage 50V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Non–Repetitive Peak Reverse Voltage, V
RMS Reverse Voltage, V

R(RMS)

Average Rectified Forward Current (Single Phase, Resistive Load, T
Nonrepetitive Peak Surge Current (Surge Applied at Rated Load Conditions), I
Operating Junction Temperature Range, T
Storage Temperature Range, T

–65° to +175°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

stg

Thermal Resistance, Junction–to–Ambient (Typical PC Board Mounting), R

RSM

= +75°C), I

A

–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

J

thJA

O

30A. . . . . . . . .

FSM

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

50V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

50V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

75V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

35V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.0A. . . . . . . .

65°C/W. . . . . . . .

Instantaneous Forward Voltage V
Forward Voltage V
Reverse Current I

Reverse Recovery Time t

Reverse Recovery Current I

.034 (0.87) Dia Max

RM(REC)IF

1.100

(27.94)

Min

IF = 3.14A, TJ = +150°C – 1.0 1.2 V

F

IF = 1A, TA = +25°C – 1.0 1.2 V

F

VR = 50V, TA = +25°C – 1.0 5.0 µA

R

VR = 50V, TA = +100°C – 50 100 µA
IF = 1A to VR = 30V, IFM = 15A,

rr

di/dt = 10A/µs

= 1A to VR = 30V – 1.0 2.0 A

.210

(5.33)

Max

Color Band Denotes Cathode

– 150 200 ns

.107 (2.72)

Dia Max