NTE NTE492 Datasheet

NTE492

MOSFET

N–Ch, Enhancement Mode

High Speed Switch

Absolute Maximum Ratings:

Drain–Source Voltage, V
Gate–Source Voltage, V
Drain Current, I

D

Continuous (Note 1) 250mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Pulsed (Note 2) 500mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Device Dissipation (T

Derate above 25°C 2.8mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature Range, T
Storage Temperature Range, T

Note 1. The Power Dissipation of the package may result in a lower continuous drain current.
Note 2. Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.

DS

GS

= +25°C), P

A

stg

D

J

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

350mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

±20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Zero–Gate–Voltage Drain Current I
Drain–Source Breakdown Voltage V
Gate Reverse Current I
ON Characteristics (Note 2)
Gate Threshold Voltage V
Static Drain–Source ON Resist-

ance

Small–Signal Characteristics

Input Capacitance C
Reverse Transfer Capacitance C
Output Capacitance C
Forward Transconductance g

(TA = +25°C unless otherwise specified)

DSS

(BR)DSXVGS

GSS

GS(Th)ID

r

DS(on)

iss
rss

oss

VDS = 130V, VGS = 0 – – 30 nA

VGS = 15V, VDS = 0 – 0.01 10.0 nA

= 1mA, VDS = V

VGS = 10V, ID = 100mA – 4.5 6.0 Ω

VGS = 10V, ID = 250mA – 4.8 6.4 Ω

VDS = 25V, VGS = 0, f = 1MHz – 60 – pF
VDS = 25V, VGS = 0, f = 1MHz – 6.0 – pF
VDS = 25V, VGS = 0, f = 1MHz – 30 – pF
VDS = 25V, ID = 250mA 200 400 – mmhos

fs

Note 2. Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.

= 0, ID = 100µA 200 – – V

GS

1.0 – 3.0 V

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Switching Characteristics

Turn–On Time t
Turn–Off Time t

.210

(5.33)

Max

.500

(12.7)

Min

on
off

– 6.0 15.0 ns
– 12 15 ns

.135 (3.45) Min

Seating Plane

.021 (0.45) Dia Max

.100 (2.54)

.105 (2.67) Max

.205 (5.2) Max

DGS

.050 (1.27)

.156

(4.2)

Max

.105 (2.67) Max