NTE NTE491 Datasheet

NTE491

MOSFET

N–Ch, Enhancement Mode

High Speed Switch

Absolute Maximum Ratings:

Drain–Source Voltage, V
Drain–Gate Voltage (R
Gate–Source Voltage, V
Drain Current, I

D

Continuous 200mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Pulsed 500mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Device Dissipation (T

Derate above 25°C 2.8mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Ambient, R
Maximum Lead Temperature (During Soldering, 1/16” from case, 10sec), T

DS

= 1MΩ), V

GS

GS

= +25°C), P

A

DGR

D

J

stg

th (JA)

60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

±40V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

350mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

312.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

L

+300°C. . . . . . . . . . . .

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Zero–Gate–Voltage Drain Current I

Drain–Source Breakdown Voltage V
Gate–Body Leakage Current, Forward I
ON Characteristics (Note 1)
Gate Threshold Voltage V
Static Drain–Source ON Resistance r

Drain–Source ON–Voltage V

ON–State Drain Current I
Forward Transconductance g

(TA = +25°C unless otherwise specified)

DSS

(BR)DSSVGS

GSSF

GS(Th)ID

DS(on)

DS(on)

d(on)

VDS = 48V, VGS = 0 – – 1.0 µA
VDS = 48V, VGS = 0, TJ = +125°C – – 1.0 mA

= 0, ID = 10µA 60 – – V

V

= 15V, VDS = 0 – – –10 nA

GSF

= 1mA, VDS = V
VGS = 10V, ID = 500mA – – 5.0 Ω
VGS = 4.5V, ID = 75mA – – 6.0 Ω
VGS = 10V, ID = 500mA – – 2.5 V
VGS = 4.5V, ID = 75mA – – 0.45 V
VGS = 4.5V, VDS = 10V 75 – – mA
VDS = 10V, ID = 200mA 100 – – µmhos

fs

Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.

GS

0.8 – 3.0 V

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Dynamic Characteristics

Input Capacitance C
Reverse Transfer Capacitance C
Output Capacitance C

Switching Characteristics

Turn–On Delay Time t
Turn–Off Delay Time t

.210

(5.33)

Max

.500

(12.7)

Min

iss
rss

oss

on
off

VDS = 25V, VGS = 0, f = 1MHz

VDD = 15V, ID = 500mA,
R

= 25Ω, RL = 25Ω

gen

.135 (3.45) Min

– – 60 pF
– – 25 pF
– – 5.0 pF

– – 10 ns
– – 10 ns

Seating Plane

.021 (0.45) Dia Max

.100 (2.54)

.105 (2.67) Max

.205 (5.2) Max

SGD

.050 (1.27)

.156

(4.2)

Max

.105 (2.67) Max