NTE NTE491 Datasheet
NTE491
MOSFET
N–Ch, Enhancement Mode
High Speed Switch
Absolute Maximum Ratings:
Drain–Source Voltage, V
Drain–Gate Voltage (R
Gate–Source Voltage, V
Drain Current, I
D
Continuous 200mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed 500mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
Derate above 25°C 2.8mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Ambient, R
Maximum Lead Temperature (During Soldering, 1/16” from case, 10sec), T
DS
= 1MΩ), V
GS
GS
= +25°C), P
A
DGR
D
J
stg
th (JA)
60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±40V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
350mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
312.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
L
+300°C. . . . . . . . . . . .
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Zero–Gate–Voltage Drain Current I
Drain–Source Breakdown Voltage V
Gate–Body Leakage Current, Forward I
ON Characteristics (Note 1)
Gate Threshold Voltage V
Static Drain–Source ON Resistance r
Drain–Source ON–Voltage V
ON–State Drain Current I
Forward Transconductance g
(TA = +25°C unless otherwise specified)
DSS
(BR)DSSVGS
GSSF
GS(Th)ID
DS(on)
DS(on)
d(on)
VDS = 48V, VGS = 0 – – 1.0 µA
VDS = 48V, VGS = 0, TJ = +125°C – – 1.0 mA
= 0, ID = 10µA 60 – – V
V
= 15V, VDS = 0 – – –10 nA
GSF
= 1mA, VDS = V
VGS = 10V, ID = 500mA – – 5.0 Ω
VGS = 4.5V, ID = 75mA – – 6.0 Ω
VGS = 10V, ID = 500mA – – 2.5 V
VGS = 4.5V, ID = 75mA – – 0.45 V
VGS = 4.5V, VDS = 10V 75 – – mA
VDS = 10V, ID = 200mA 100 – – µmhos
fs
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
GS
0.8 – 3.0 V
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Dynamic Characteristics
Input Capacitance C
Reverse Transfer Capacitance C
Output Capacitance C
Switching Characteristics
Turn–On Delay Time t
Turn–Off Delay Time t
.210
(5.33)
Max
.500
(12.7)
Min
iss
rss
oss
on
off
VDS = 25V, VGS = 0, f = 1MHz
VDD = 15V, ID = 500mA,
R
= 25Ω, RL = 25Ω
gen
.135 (3.45) Min
– – 60 pF
– – 25 pF
– – 5.0 pF
– – 10 ns
– – 10 ns
Seating Plane
.021 (0.45) Dia Max
.100 (2.54)
.105 (2.67) Max
.205 (5.2) Max
SGD
.050 (1.27)
.156
(4.2)
Max
.105 (2.67) Max
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