NTE NTE490 Datasheet
NTE490
MOSFET
N–Ch, Enhancement Mode
High Speed Switch
Absolute Maximum Ratings:
Drain–Source Voltage, V
Gate–Source Voltage, V
Drain Current (Note 1), I
Total Device Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Note 1. The Power Dissipation of the package may result in a lower continuous drain current.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
DS
GS
D
= +25°C), P
A
stg
500mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
J
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
350mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
OFF Characteristics
Drain–Source Breakdown Voltage V
Gate Reverse Current I
ON Characteristics (Note 2)
Gate Threshold Voltage V
Static Drain–Source ON Resistance rDS(on) VGS = 10V, ID = 200mA – 1.8 5.0
Drain Cutoff Current I
Forward Transconductance g
Small–Signal Characteristics
Input Capacitance C
Switching Characteristics
Turn–On Time t
Turn–Off Time t
(BR)DSSVGS
GSS
GS(Th)VDS
D(off)
fs
iss
on
off
= 0, ID = 100µA 60 90 – V
VGS = 15V, VDS = 0 – 0.01 10 nA
= VGS, ID = 1mA 0.8 2.0 3.0 V
VDS = 25V, VGS = 0 – – 0.5 µA
VDS = 10V, ID = 250mA – 200 – mmhos
VDS = 10V, VGS = 0, f = 1MHz – – 60 pF
ID = 200mA – 4 10 ns
ID = 200mA – 4 10 ns
Note 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Ω
.210
(5.33)
Max
.135 (3.45) Min
Seating Plane
.500
(12.7)
Min
.100 (2.54)
.021 (.445) Dia Max
D G S
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
.205 (5.2) Max
.105 (2.67) Max
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