NTE NTE490 Datasheet

NTE490
MOSFET
N–Ch, Enhancement Mode
High Speed Switch
Absolute Maximum Ratings:
Drain–Source Voltage, V Gate–Source Voltage, V Drain Current (Note 1), I Total Device Dissipation (T Operating Junction Temperature Range, T Storage Temperature Range, T
Note 1. The Power Dissipation of the package may result in a lower continuous drain current.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
DS GS D
= +25°C), P
A
stg
500mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
J
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
350mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
OFF Characteristics
Drain–Source Breakdown Voltage V Gate Reverse Current I ON Characteristics (Note 2) Gate Threshold Voltage V Static Drain–Source ON Resistance rDS(on) VGS = 10V, ID = 200mA 1.8 5.0 Drain Cutoff Current I Forward Transconductance g
Small–Signal Characteristics
Input Capacitance C
Switching Characteristics
Turn–On Time t Turn–Off Time t
(BR)DSSVGS
GSS
GS(Th)VDS
D(off)
fs
iss
on off
= 0, ID = 100µA 60 90 V
VGS = 15V, VDS = 0 0.01 10 nA
= VGS, ID = 1mA 0.8 2.0 3.0 V
VDS = 25V, VGS = 0 0.5 µA VDS = 10V, ID = 250mA 200 mmhos
VDS = 10V, VGS = 0, f = 1MHz 60 pF
ID = 200mA 4 10 ns ID = 200mA 4 10 ns
Note 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
.210
(5.33)
Max
.135 (3.45) Min
Seating Plane
.500
(12.7)
Min
.100 (2.54)
.021 (.445) Dia Max
D G S
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
.205 (5.2) Max
.105 (2.67) Max
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