NTE NTE49, NTE50 Datasheet

NTE49 (NPN) & NTE50 (PNP)

Silicon Complementary Transistors

General Purpose, High Voltage Amp, Driver

Description:

The NTE49 (NPN) and NTE50 (PNP) are silicon complementary transistors in a TO202 type case
designed for general purpose, high voltage amplifier and driver applications.

Features:

D High Collector Breakdown Voltage: V
D High Power Dissipation: P

= 10W @ TC = +25°C

D

(BR)CEO

Absolute Maximum Ratings:

Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Total Power Dissipation (T

CEO

CB

EB

C

= +25°C), P

A

D

Derate Above 25°C 8mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Power Dissipation (T

= +25°C), P

C

D

Derate Above 25°C 80mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature Range, T
Storage Temperature Range, T

stg

Thermal Resistance, Junction–to–Case, R

J

thJC

Thermal Resistance, Junction–to–Ambient, R

= 100V Min @ IC = 1mA

thJA

100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

120V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

4V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

10W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

12.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

125°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Note 1. NTE49 is a discontinued device and no longer available.

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I

(BR)CEOIC
(BR)EBOIE

CBO

= 1mA, IB = 0 100 – – V
= 100µA, IC = 0 4 – – V

VCB = 40V, IE = 0 – – 100 nA
ON Characteristics (Note 2)
DC Current Gain h

FE

IC = 50mA, VCE = 1V 80 125 –

IC = 250mA, VCE = 1V 60 100 –

IC = 500mA, VCE = 1V – 55 –
Collector–Emitter Saturation Voltage V

CE(sat)IC

= 250mA, IB = 10mA – 0.18 0.4 V

IC = 250mA, IB = 25mA – 0.1 – V
Base–Emitter ON Voltage V

BE(on)IC

= 250mA, VCE = 5V – 0.74 1.2 V

Small–Signal Characteristics

Current Gain–Bandwidth Product f

T

IC = 250mA, VCE = 5V,

f = 100MHz, Note 1
Output Capacitance C

ob

VCB = 10V, IE = 0, f = 100kHz – 6 12 pF

Note 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.

50 150 – MHz

C

.500

(12.7)

1.200

(30.48)

Ref

.300

(7.62)

.400

(10.16)

Min

EBC

.100 (2.54) .100 (2.54)

.132 (3.35) Dia

.325

(9.52)

.180 (4.57).380 (9.56)

.070 (1.78) x 45°

Chamf

.050 (1.27)