NTE NTE489 Datasheet

NTE489

Silicon P–Channel JFET Transistor

General Purpose AF Amplifier

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

Gate–Drain Voltage (Note 1), V
Gate–Source Voltage (Note 1), V
Gate Current, I

G

Total Device Dissipation (T

GD

GS

= +25°C), P

A

D

Derate Above 25°C 3.27mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature Range, T
Storage Temperature Range, T

stg

J

Lead Temperature (During Soldering, 1/16” from case for 10sec), T

L

–55° to +135°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Note 1. Geometry is symmetrical. Units may be operated with source and drain leads interchanged.

30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–50mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

360mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+300°C. . . . . . . . . . . . . . . . . . .

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

Static Characteristics

Gate–Source Breakdown Voltage V
Gate Reverse Current I
Gate–Source Cutoff Voltage V
Gate Current I
Saturation Drain Current I

Dynamic Characteristics

Common–Source Forward

Transconductance

Common–Source Output Conductance g
Common–Source Input Capacitance C
Common–Source Reverse Transfer

Capaticance

Equivalent Short–Circuit Input Noise

Voltage

(TA = +25°C unless otherwise specified)

(BR)GSSIG

GSS

GS(off)ID

G

DSS

g

fs

os
iss

C

rss

e

n

= 1µA, VDS = 0 30 – – V

VGS = 20V, VDS = 0, Note 2 – – 200 pA

= –1nA, VDS = –15V 0.5 – 2.0 V
ID = –2mA, VDG = –15V, Note 2 – 15 – pA
VDS = –15V, VGS = 0 –2 – –15 mA

VDS = –15V, VGS = 0, f = 1kHz,
Note 3

VDS = –15V, VGS = 0, f = 1kHz –
VDS = –15V, VGS = 0, f = 1MHz – 32 – pF
VDS = –15V, VGS = 0, f = 1MHz – 4 – pF

VDS = –10V, ID = –2mA, f = 1kHz – 6 –

Note 2. Approximately doubles for every 10°C increase in TA.

6000 – 15000 µmho

200 µmho

–

nV

pHz

Note 3. Pulse test duration = 2ms.

.210

(5.33)

Max

.135 (3.45) Min

Seating Plane

.500

(12.7)

Min

.100 (2.54)

.021 (.445) Dia Max

D G S

.050 (1.27)

.165

(4.2)

Max

.105 (2.67) Max

.205 (5.2) Max

.105 (2.67) Max