NTE NTE488 Datasheet
NTE488
Silicon NPN Transistor
RF Power Output
Description:
The NTE488 is a silicon NPN epitaxial planar type transistor designed for industrial use RF power
Amplifiers on VHF band mobile radio applications.
Features:
D High Power Gain: G
D TO39 Metal Sealed Package for High Reliability
D Emitter Electrode is Connected Electrically to the Case
Application:
1 to 3 Watt Power Amplifiers in VHF Band Mobile Radio Applications.
≥ 10.7dB @ VCC = 13.5V, PO = 3.5W, f = 175MHz
pe
Absolute Maximum Ratings
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Collector Dissipation, P
C
C
: (TC = +25°C unless otherwise specified)
CBO
EBO
TA = +25°C 1W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
Junction Temperature, T
Storage Temperature Range, T
= +25°C 10W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
j
stg
Thermal Resistance, Junction–to–Ambient, R
Thermal Resistance, Junction–to–Case, R
Electrical Characteristics
Parameter Symbol Test Conditions Min Typ Max Unit
Emitter–Base Breakdown Voltage V
Collector–Base Breakdown Voltage V
Collector–Emitter Breakdown Voltage V
: (TC = +25°C unless otherwise specified)
thJC
(BR)EBO
(BR)CBOIC
(BR)CEOIC
–65° to +175°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJA
4 – – V
= 10mA, IE = 0 35 – – V
= 50A, RBE = ∞ 17 – – V
150°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
35V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+175°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
15°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I
Emitter Cutoff Current I
DC Forward Current Gain h
Output Power P
Collector Efficiency η
CBO
EBO
FE
O
Note 1. Pulse Test: PW = 150µs duty = 5%.
.260 (6.6)
Max
VCB = 25V, IE = 0 – – 500 µA
VEB = 3V, IO = 0 – – 500 µA
VCE = 10V, IC = 0.1A, Note 1 10 50 180 –
VCC = 13.5V Pin = 0.3W,
f = 175MHz
3.5 4.0 – W
50 60 – %
.370 (9.39) Dia Max
.355 (9.03) Dia Max
.500 (12.7)
Emitter/Case
Min
.018 (0.45) Dia
Base
Collector
45°
.031 (.793)
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