NTE NTE486 Datasheet

NTE486

Silicon NPN Transistor

RF High Frequency Amplifier

Description:

The NTE486 is a silicon NPN high frequency RF transistor in a TO39 type package designed for use
in 12.5V UHF large–signal applications required in industrial equipment.

Features:

D Specified 12.5V, 470MHz Characteristics:

Output Power = 0.75W
Minimum Gain = 8dB
Effeciency = 50%

D S Parameter Data from 100MHz to 1GHz

Absolute Maximum Ratings:

Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V

CEO

CBO

EBO

Continuous Collector Current, I
Total Device Dissipation (T

= +25°C), P

C

Derate Above 25°C 14.3mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage Temperature Range, T

C

stg

D

–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

35V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

4V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

150mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

2.5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Collector–Emitter Breakdown Voltage V
Collector–Base Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I

ON Characteristics

DC Current Gain h
Collector–Emitter Saturation Voltage V

(TC = +25°C unless otherwise specified)

(BR)CEOIC
(BR)CBOIC
(BR)EBOIE

CEO

FE

CE(sat)IC

VCE = 15V, IB = 0 – – 10 µA

VCE = 10V, IC = 50mA 20 60 150

= 5mA, IB = 0 20 – – V
= 100µA, IE = 0 35 – – V
= 100µA, IC = 0 4 – – V

= 50mA, IB = 5mA – – 0.5 V

Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Dynamic Characteristics

Current Gain–Bandwidth Product f
Output Capacitance C

Functional Tests

Common–Emitter Amplifier Power Gain G
Collector Efficiency h
Series Equivalent Input Impedance Z
Series Equivalent Output Impedance Z

.260 (6.6)

Max

T
ob

PE

out

VCE = 10V, IC = 100mA, f = 200MHz 1800 2000 – MHz
VCB = 12.5V, IE = 0, f = 1MHz – 3.5 4.0 pF

VCC = 12.5V, PO = 0.75W,
f = 470MHz

in

8.0 8.5 – dB
50 70 – %

– 14+j4.0 – Ω
– 28–j38 – Ω

.370 (9.39) Dia Max

.355 (9.03) Dia Max

.500 (12.7)

Min

Emitter

.018 (0.45) Dia

Base
Collector/Case

45°

.031 (.793)