NTE NTE486 Datasheet
NTE486
Silicon NPN Transistor
RF High Frequency Amplifier
Description:
The NTE486 is a silicon NPN high frequency RF transistor in a TO39 type package designed for use
in 12.5V UHF large–signal applications required in industrial equipment.
Features:
D Specified 12.5V, 470MHz Characteristics:
Output Power = 0.75W
Minimum Gain = 8dB
Effeciency = 50%
D S Parameter Data from 100MHz to 1GHz
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
CEO
CBO
EBO
Continuous Collector Current, I
Total Device Dissipation (T
= +25°C), P
C
Derate Above 25°C 14.3mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
C
stg
D
–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
35V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
150mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage V
Collector–Base Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I
ON Characteristics
DC Current Gain h
Collector–Emitter Saturation Voltage V
(TC = +25°C unless otherwise specified)
(BR)CEOIC
(BR)CBOIC
(BR)EBOIE
CEO
FE
CE(sat)IC
VCE = 15V, IB = 0 – – 10 µA
VCE = 10V, IC = 50mA 20 60 150
= 5mA, IB = 0 20 – – V
= 100µA, IE = 0 35 – – V
= 100µA, IC = 0 4 – – V
= 50mA, IB = 5mA – – 0.5 V
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Dynamic Characteristics
Current Gain–Bandwidth Product f
Output Capacitance C
Functional Tests
Common–Emitter Amplifier Power Gain G
Collector Efficiency h
Series Equivalent Input Impedance Z
Series Equivalent Output Impedance Z
.260 (6.6)
Max
T
ob
PE
out
VCE = 10V, IC = 100mA, f = 200MHz 1800 2000 – MHz
VCB = 12.5V, IE = 0, f = 1MHz – 3.5 4.0 pF
VCC = 12.5V, PO = 0.75W,
f = 470MHz
in
8.0 8.5 – dB
50 70 – %
– 14+j4.0 – Ω
– 28–j38 – Ω
.370 (9.39) Dia Max
.355 (9.03) Dia Max
.500 (12.7)
Min
Emitter
.018 (0.45) Dia
Base
Collector/Case
45°
.031 (.793)
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