NTE NTE483 Datasheet
NTE483
Silicon NPN Transistor
RF Power Output for Mobile Use,
= 18W @ 866MHz
P
O
Description:
The NTE483 is a 12.5 Volt epitaxial silicon NPN planer transistor designed for primarily for 800MHz
mobile communications. This device utilizes matched input technology (Tuned Q) to increase bandwidth and power gain over the complete range of 806–866MHz.
Features:
D Designed for 806–866MHz Mobile Equipment
D 18W Min., with Greater than 6dB Gain at 836MHz
D Withstands 10:1 VSWR at Rated Operating Conditions
D Matched Input Technology
D Common Base
Absolute Maximum Ratings
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Maximum Collector Current, I
Total Device Dissipation (At +25°C), P
Operating Junction Temperature, T
Storage Temperature Range, T
: (TC = +25°C unless othrwise specified)
CBO
CEO
EBO
C
tot
J
stg
Thermal Resistance, Junction–to–Case, R
Electrical Characteristic
Parameter Symbol Test Conditions Min Typ Max Unit
Static
Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I
DC Current Gain h
: (TC = +25°C unless otherwise specified)
(BR)CEOIC
V
(BR)CESIC
(BR)EBOIE
CES
FE
+200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJC
= 50mA, IB = 0, Note 1 16 – – V
= 50mA, VBE = 0, Note 1 36 – – V
= 10mA, iC = 0 4 – – V
VCE = 15V, VBE = 0 – – 10 mA
VCE = 6V, IC = 1A 20 – –
3.8°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
36V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
16V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
46W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Pulsed through 25mH indicator.
Electrical Characteristic (Cont’d): (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Dynamic
Output Power P
Power Gain P
Impedance Z
Output Capacitance C
VCE = 12.5V, f = 836MHz 18 – – W
O
VCE = 12.5V, f = 836MHz 6 – – dB
G
VCE = 12.5V, Pi = 15W, f = 836MHz – 3.0– j4.8 – Ω
s
Z
cl
VCB = 12.5V, IE = 0, f = 1MHz – 20 – pF
ob
– 1.6– j2.5 – Ω
.725 (18.42)
.325 (8.28) Max
.195 (4.97) Max
.130 (3.3) Dia
BC
.960
(24.38)
Max
.380 (5.72) Dia Max
.180
(4.57)
Max
EB
.225 (5.72) Max
.285
(7.25)
Max
.730 (18.54)
.960 (24.38) Max
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