NTE NTE48 Datasheet
Darlington, General Purpose Amplifier,
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Total Device Dissipation (T
Derate Above 25°C 8.0mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CES
CBO
EBO
= +25°C), P
A
NTE48
Silicon NPN Transistor
High Current
C
D
50V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1000mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.0W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
= +25°C), P
C
D
Derate Above 25°C 20mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
stg
Thermal Resistance, Junction–to–Case, R
J
thJC
Thermal Resistance, Junction–to–Ambient, R
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Breakdown
Voltage
Collector–Base Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Voltage I
Emitter Cutoff Current I
(TA = +25°C unless otherwise specified)
V
(BR)CESIC
(BR)CBOIC
(BR)EBOIE
CBO
EBO
VCB = 40V, IE = 0 – – 100 nA
VBE = 10V, IC = 0 – – 100 nA
2.5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJA
= 1mA, IB = 0, Note 1 50 – – V
= 1.0µA, IE = 0 600 – – V
= 10µA, IC = 0 12 – – V
125°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain h
Collector–Emitter Saturation Voltage V
Base–Emitter ON Voltage V
Small–Signal Characteristics
Current Gain–Bandwidth Product f
Collector–Base Capacitance C
CE(sat)IC
BE(on)IC
FE
T
cb
IC = 200mA, VCE = 5V 25,000 – –
IC = 1000mA, VCE = 5V 4,000 – 40,000
= 1000mA, IB = 2mA – – 1.5 V
= 1000mA, VCE = 5V – – 2.0 V
IC = 200mA, VCE = 5V,
f = 100MHz
VCB = 10V, IE = 0, f = 1MHz – – 10 pF
100 – 1000 MHz
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%
.339
(8.62)
Max
Seating Plane
.026 (.66)
C
B
E
.512
(13.0)
Min
Dia Max
E B C
.100 (2.54)
.200
(5.08)
Max
.240 (6.09) Max
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