NTE NTE478 Datasheet
NTE478
Silicon NPN Transistor
RF Power Output, P
Description:
The NTE478 is a 12.5 Volt epitaxial silicon NPN planar transistor designed primarily for VHF communications. This device utilizes diffused emitter resistors to achieve infinite VSWR under operating
conditions, and is internally input matched to optimize power gain and efficiency over the band.
Features:
D Designed for VHF Military and Commercial Equipment
D 100W Min with Greater than 6.0dB Gain
D Withstands Infinite VSWR under Operating Conditions
D Low Intermodulation Distortion (–32dB)
D Diffused Emitter Resistors
Absolute Maximum Ratings: (TC = +25°C unless othrwise specified)
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Maximum Collector Current, I
Total Device Dissipation (At +25°C), P
Operating Junction Temperature, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
CBO
CEO
EBO
C
tot
J
stg
thJC
= 100W @ 175MHz
O
36V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
18V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
20A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
270W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
65°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristic
Parameter Symbol Test Conditions Min Typ Max Unit
Static
Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I
DC Current Gain h
: (TC = +25°C unless otherwise specified)
(BR)CEOIC
V
(BR)CESIC
(BR)EBOIE
CBO
FE
Note 1. Pulsed through 25mH indicator.
= 100mA, IB = 0, Note 1 18 – – V
= 100mA, VBE = 0, Note 1 36 – – V
= 10mA, iC = 0 4 – – V
VCB = 12V, IE = 0 – – 10 mA
VCE = 6V, IC = 5A 10 – –
Electrical Characteristic (Cont’d): (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Static
Output Power P
Power Gain P
Impedance Z
Output Capacitance C
.405
(10.3)
Min
O
G
s
Z
cl
ob
.205 (5.18)
VCE = 12.5V, f = 175MHz 100 – – W
VCE = 12.5V, f = 175MHz 6 7 – dB
VCE = 12.5V, Pi = 20W, f = 175MHz – 1.5– j0.9 – Ω
– 0.5– j0.1 – Ω
VCB = 12V, IE = 0, f = 1MHz – 354 – pF
.215 (5.48)
.122 (3.1) Dia
EB
.160 (4.06)
CE
.155 (3.94)
.500 (12.7) Dia
.005 (0.15)
.270
(6.85)
.725 (18.43)
.975 (24.78)
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