NTE NTE477 Datasheet

NTE477

Silicon NPN Transistor

RF Power Output

Description:

The NTE477 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF
band mobile radio applications.

Features:

D High power gain: Gpe ≥ 8.2dB @ VCC = 13.5V; VO = 40W; t = 175MHz
D Emitter ballasted construction and gold metallization for high reliability, and good performances
D Low thermal resistance ceramic package with flange
D Ability of withstanding more than 20:1 load VSWR when operated at VCC = 15.2V,

P

= 40W, f = 175MHz, TC = 25°C

O

Applications:

30 to 35 watts output power amplifiers in VHF band mobile radio applications.

Absolute Maximum Ratings

Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector–Emitter Voltage (R
Collector Current, I
Collector Dissipation, P

C

C

: (TC = +25°C unless otherwise specified)

CBO

EBO

= ∞), V

BE

CEO

TA = +25°C 4.5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

T

= +25°C 75W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

C

Junction Temperature, T
Storage Temperature Range, T

j

stg

Thermal Resistance, Junction–to–Ambient, R
Thermal Resistance, Junction–to–Case, R

Electrical Characteristics

Parameter Symbol Test Conditions Min Typ Max Unit

Emitter–Base Breakdown Voltage V
Collector–Base Breakdown Voltage V
Collector–Emitter Breakdown Voltage V

: (TC = +25°C unless otherwise specified)

thJC

(BR)EBOIE
(BR)CBOIO
(BR)CEOIO

–55° to +175°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

thJA

= 10mA, IO = 0 3 – – V

= 10mA, IE = 0 35 – – V
= 0.1A, RBE = ∞ 17 – – V

33.3°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

35V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

4V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

17V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

10A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+175°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

2°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Collector Cutoff Current I
Emitter Cutoff Current I
DC Forward Current Gain h
Output Power P

CBO
EBO

.205 (5.18)

EB

.405

(10.3)

Min

FE

VOB = 15V, IE = 0 – – 2.5 mA
VEB = 3V, IO = 0 – – 2 mA
VCE = 10V, IC = 0.2A 10 60 180 –
VCC = 13.5V Pin = 6W,

O

f = 175MHz

40 45 – W
60 70 – %

.215 (5.48)

.122 (3.1) Dia

.160

(4.06)

CE

.155 (3.94)

.500 (12.7) Dia

.005 (0.15)

.270

(6.85)

.725 (18.43)
.975 (24.78)