NTE NTE476 Datasheet

NTE476

Silicon NPN Transistor

RF Power Output

Description:

The NTE476 is a silicon epitaxial NPN–planar transistor which employs a multi–emitter electrode de­sign. This feature together with a heavily dif fused base matrix located between the individual emitters
result in high RF current handling capability, high power gain, low base resistance and low output ca­pacitance. This device is intended for use as a Class A, B or C amplifier and in oscillator and frequency
multiplier circuits.

Features:

D Designed for VHF mobile and marine transmitters
D High efficiency at maximum stability
D Improved metallization to achieve extreme ruggedness

Absolute Maximum Ratings

Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Total Dissipation at 25°C Stud, P

: (TA = +25°C except where specified)

CBO

CEO

EBO

max 3A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

C

D

Thermal Resistance, Junction–to–Stud, R
Junction Temperature Range, T
Storage Temperature Range, T

Electrical Characteristics

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Collector–Emitter Breakdown Voltage V
Collector–Base Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I

Dynamic Characteristics

Current Gain – Bandwidth Product f
Output Capacitance C

Functional Tests

J

stg

: (TA = +25°C unless otherwise specified)

(BR)CEOIC
(BR)CBOIC
(BR)EBOIE

CBO

T
ob

thJC

7.54°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to 200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to 200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

= 200mA, IB = 0, Note 1 18 – – V
= 500µA, IE = 0 36 – – V
= 2mA, IC = 0 4 – – V

VCB = 15V, IE = 0 – – 0.25 mA

IC = 100mA, VCE = 13.6V – 350 – MHz
VCB = 13.6V, IE = 0, f = 100kHz – – 45 pF

36V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

18V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

4V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

23.2W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Power Output P
Power Gain (Class C) P

Collector Efficiency (Class C) η 80 – – %

OUT

VCE = 13.6V, f = 175MHz 12 – – W

g

4.77 – – dB

Note 1. Pulsed thru a 25mH inductor.

Collector

Base

.038 (0.98) Dia

.480

(12.19)

Max

.200

(5.08)

Dia

Emitter/Stud

.430

(10.92)

.340 (8.63) Dia

.320

(8.22)

Max

.113 (2.88)

10–32 NF–2A

.078

(1.97)

Max

.455

(11.58)

Max