NTE NTE475 Datasheet

NTE475

Silicon NPN Transistor

RF Power Output

Description:

The NTE475 is an N PN s ilicon a nnular R F p ower t ransistor, optimized f or l arge–scale p ower–amplifier
and driver applications to 300MHz.

Absolute Maximum Ratings

Collector–Emitter Voltage, V
Collector–Base Voltage,V
Emitter–Base Voltage, V
Collector Current, I
Power Dissipation (T

C

= +25°C), PD 11.6W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

C

: (TA = +25°C unless otherwise specified)

CEO

CB

EB

Derate Above 25°C 66.3mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature Range, T
Storage Temperature Range, T

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Collector–Emitter Sustaining Voltage V
Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage V

Dynamic Characteristics

Current Gain – Bandwidth Product f
Output Capacitance C

Functional Tests

stg

(TA = +25°C unless otherwise specified)

CEO(sus)IC
(BR)CEOIC

(BR)EBOIE

T
ob

J

–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

= 200m A, Note 1 18 – – V
= 0.25mA, IE = 0 36 – – V
= 1mA, IC = 0 4 – – V

IC = 100mA, VCE = 13.6V, f = 100MHz – 350 – MHz
VCB = 13.6V, IE = 0, f = 100kHz – 12.5 20.0 pF

18V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

36V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

4V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Power Input P
Common–Emitter Amplifier Power Gain G

Collector Efficiency η 80 – – %

in

pe

RL = 50Ω, P

= 12W, f = 175MHz – – 4.0 W

out

4.77 5.0 – dB

Note 1. Pulsed thru a 25mH inductor.

Collector

Base

.038 (0.98) Dia

.480

(12.19)

Max

.200

(5.08)

Dia

Emitter/Stud

.430

(10.92)

.340 (8.63) Dia

.320

(8.22)

Max

.113 (2.88)

10–32 NF–2A

.078

(1.97)

Max

.455

(11.58)

Max