NTE NTE473 Datasheet

NTE473

Silicon NPN Transistor

RF Power Driver

Description:

The NTE473 is a silicon NPN transistor in a TO39 type package designed for amplifier and oscillator
applications in military and industrial equipment. Suitable for use as output, driver or predriver stages
in VHF equipment.

Features:

D Specified 175MHz, 28V Characteristics:

Output Power: 2.5W
Minimum Gain: 10dB
Efficiency: 50%

Absolute Maximum Ratings:

Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I

C

Total Device Dissipation (T

CEO

CB

EB

= +25°C), P

C

D

Derate Above 25°C 40mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature Range, T
Storage Temperature Range, T

stg

J

–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

40V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

65V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

4V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

7W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Collector–Emitter Sustaining Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I

Emitter Cutoff Current I

(TA = +25°C unless otherwise specified)

CEO(sus)IC

(BR)EBOIE

CEO

I

CEX

EBO

Note 1. Pulsed thru a 25mH inductor.

= 200mA, IB = 0, Note 1 40 – – V

= 0.1mA, IC = 0 4 – – V
VCE = 30V, IB = 0 – – 0.1 mA
VCE = 30V, V
VCE = 65V, V
VBE = 4V, IC = 0 – – 0.1 mA

= 1.5V, TC = +200°C – – 5.0 mA

BE(off)

= 1.5V – – 1.0 mA

BE(off)

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

ON Characteristics

DC Current Gain h
Collector–Emitter Saturation Voltage V

Dynamic Characteristics

Current Gain – Bandwidth Product f
Output Capacitance C

Functional Tests

Power Input P
Common–Emitter Amplifier Power Gain G

Collector Efficiency η 50 – – %

FE

CE(sat)IC

IC = 250mA, VCE = 5V 10 – –

= 250mA, IB = 50mA – – 1.0 V

IC = 100mA, VCE = 28V, f = 100MHz – 500 – MHz

T

VCB = 30V, IE = 0, f = 100kHz – 8.0 10.0 pF

ob

in

pe

VCE = 28V, P

= 2.5W, f = 175MHz – – 0.25 W

out

10 – – dB

.370 (9.39) Dia Max

.355 (9.03) Dia Max

.260 (6.6)

Max

.500 (12.7)

Min

Emitter

.018 (0.45) Dia

Base
Collector/Case

45°

.031 (.793)