NTE NTE472 Datasheet

NTE472

Silicon NPN Transistor

RF Power Output

= 1.8W @ 175MHz

P

O

Description:

The NTE472 is a silicon NPN transistor designed for amplifier, frequency multiplier or oscillator ap­plications in military, mobile marine and citizens band equipment. Suitable for use as output driver
or pre–driver stages in VHF and UHF equipment.

Features:

D Specified 12.5 Volt, 175MHz Characteristics:

Output Power = 1.75 Watts
Minimum Gain = 11.5dB
Efficiency = 50%

D Characterized through 225MHz

Absolute Maximum Ratings:

Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V

CBO

EBO

Continuous Collector Current, I
Total Device Dissipation (T

Derate Above 75°C 28mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage Temperature Range, T

16V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

CEO

36V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

3.5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.33A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

C

= +75°C , Note 1), PD 3.5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

C

–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

stg

Note 1. This device is designed for RF operation. The total device dissipation rating applies only

when the device is operated as a class B or C RF amplifier.

Electrical Characteristics

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Collector–Emitter Breakdown Voltage V

Emitter–Base Breakdown Voltage V
Collector Cutoff Current I

: (TC = +25°C unless otherwise specified)

(BR)CEOIC

V

(BR)CESIC
(BR)EBOIC

CEO

= 25mA, IB = 0 16 – – V
= 25mA, VBE = 0 36 – – V
= 0.5mA, IC = 0 3.5 – – V

VCE = 10V, IB = 0 – – 0.3 mA

Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

ON Characteristics

DC Current Gain h

Dynamic Characteristics

Output Capacitance C

Functional Test

Common–Emitter Amplifier Power Gain G
Collector Efficiency η

.260
(6.6)
Max

FE

ob

PE

VCE = 5V, IC = 50mA 20 – 150

VCB = 12V, IE = 0, f = 1MHz – – 15 pF

P

= 1.75W, VCC = 12.5V,

OUT

f = 175MHz

11.5 – – dB
50 – – %

.370 (9.39) Dia Max

.355 (9.03) Dia Max

(12.7)

Emitter

.500

Min

.018 (0.45) Dia

Base

Collector/Case

45°

.031 (.793)