NTE NTE471 Datasheet

NTE471

Silicon NPN Transistor

RF Power Output

PO = 100W @ 30MHz

Description:

The NTE471 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB communica­tions. This device utilizes state–of–the–art diffused emitter ballasting for improved ruggedness and
reliability.

Features:

D Better than 15dB Gain at 30MHz and 100W (CW/PEP)
D Diffused Emitter Ballasting
D Withstands Infinite Mismatch at Operating Conditions
D Low Inductance Stripline Package
D Frequency = 30MHz
D Power Out = 100 Watts
D Voltage = 28 Volts
D Power Gain = 15dB

Absolute Maximum Ratings: (TC = +25°C unless otherweise specified)
Collector–Base Voltage, V

Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Maximum Collector Current, I
Total Device Dissipation (TC = +25°C), P
Maximum Junction Temperatures, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R

CBO

CEO

EBO

C

tot

J

stg

thJC

65V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

36V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

4V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

20A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

270W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

65°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Collector Cutoff Current I
Collector–Emitter Breakdown Voltage V

Emitter–Base Breakdown Voltage V

(BR)CEOIC

V

(BR)CESIC
(BR)EBOIE

DC Current Gain h

Dynamic Characteristics

Power Output P
Power Gain P
Capacitance C

Note 1. Pulsed through a 25mH inductor.

EC

CES

FE

ob

VCE = 30V, VBE = 0 – – 15 mA

VCE = 5V, IC = 5A 10 50 –

VCE = 28V, f = 30MHz 100 – – W

O

VCE = 28V, f = 30MHz 15.6 16.0 – dB

g

VEB = 30V, IE = 0, f = 1MHz – 250 – pF

.725 (18.42)

= 100mA, IB = 0, Note 1 36 – – V
= 100mA, VBE = 0, Note 1 65 – – V
= 10mA, IC = 0 4 – – V

.127 (3.17) Dia
(2 Holes)

.250

(6.35)

BE

.225 (5.72)

1.061 (26.95)

Ceramic Cap

.480 (12.1) Dia

.260
(6.6)

.065 (1.68) .095 (2.42)

.975 (24.77)