NTE NTE470 Datasheet
NTE470
Silicon NPN Transistor
RF Power Output
Description:
The NTE470 is a silicon NPN RF transistor in a W52 type package designed primarily for application
as a high–power linear amplifier from 2.0 to 30MHz.
Features:
D Specified 12.5V, 30MHz Characteristics:
Output Power = 100W (PEP)
Minimum Gain = 10dB
Efficiency = 40%
D Intermodulation Distortion @ 100W (PEP): IMD = –30dB Min
D 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
CEO
CBO
EBO
C
Withstand Current (10s) 30A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (TC = +25°C), P
D
Derate Above 25°C 1.66W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
Thermal Resistance, Junction–to–Case, R
thJC
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
45V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
20A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
290W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.6°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage V
V
Collector–Base Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I
(BR)CEOIC
(BR)CESIC
(BR)CBOIC
(BR)EBOIE
CES
= 50mA, IB = 0 20 – – V
= 200mA, VBE = 0 45 – – V
= 200mA, IE = 0 45 – – V
= 10mA, IC = 0 3 – – V
VCE = 16V, VBE = 0, TC = +25°C – – 10 mA
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics
DC Current Gain h
Dynamic Characteristics
Output Capacitance C
Functional Tests
Common–Emitter Amplifier Power Gain G
Collector Efficiency η
Intermodulation Distortion (Note 1) IMD
FE
IC = 5A, VCE = 5V 10 30 –
VCB = 12.5V, IE = 0, f = 1MHz – 650 800 pF
ob
VCC = 12.5V, P
PE
IC(max) = 10A, ICQ = 150mA,
f = 30, 30.001MHz
f = 30, 30.001MHz
= 100W,
out
10 12 – dB
40 – – %
– –33 –30 dB
Note 1. To proposed EIA method of measurement. Reference peak envelope power.
.725 (18.42)
.127 (3.17) Dia
(2 Holes)
EC
.250
(6.35)
.225 (5.72)
.065 (1.68)
.480 (12.1) Dia
BE
1.061 (26.95)
Ceramic Cap
.975 (24.77)
.260
(6.6)
.095 (2.42)
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