NTE NTE47 Datasheet
Absolute Maximum Ratings:
NTE47
Silicon NPN Transistor
High Gain, Low Noise Amp
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Total Device Dissipation (T
CEO
CBO
EBO
C
= +25°C), P
A
D
Derate above 25°C 12mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
stg
Thermal Resistance, Junction–to–Case, R
J
thJC
Thermal Resistance, Junction–to–Ambient (Note 1), R
Note 1 R
Electrical Characteristics
OFF Characteristics
Collector–Emitter Breakdown Voltage V
Colletor–Base Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I
ON Characteristics (Note 2)
is measured with the device soldered into a typical printed circuit board.
thJA
: (TA = +25°C unless otherwise noted)
Parameter Symbol Test Conditions Min Typ Max Unit
(BR)CEOIC
(BR)CBOIC
(BR)EBOIE
CBO
= 10mA, IB = 0, Note 2 45 – – V
= 100µA, IE = 0 45 – – V
= 10µA, IC = 0 6.5 – – V
VCB = 30V, IE = 0 – 1.0 50 nA
thJA
45V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
45V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6.5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
200mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
625mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
83.3°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
200°C/W. . . . . . . . . . . . . . . . . . . . . . . . . .
DC Current Gain h
Collector–Emitter Saturation Voltage V
Base–Emitter ON Voltage V
FE
CE(sat)IC
BE(on)
VCE = 5V, IC = 10µA 400 580 –
VCE = 5V, IC = 100µA 500 850 –
VCE = 5V, IC = 1mA 500 1100 –
VCE = 5V, IC = 10mA 500 1150 –
= 10mA, IB = 0.5mA – – 0.2 V
IC = 50mA, IB = 0.5mA – 0.08 0.3 V
VCE = 5V, IC = 1mA – 0.6 0.7 V
Note 2 Pulse test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
Electrical Characteristics: (TA = +25°C unless otherwise noted)
Parameter Symbol Test Conditions Min Typ Max Unit
Small–Signal Characteristics
Current Gain–Bandwidth Product f
Output Capaciatnce C
Noise Figure
.210
(5.33)
Max
.500
(12.7)
Min
obo
NF
T
VCE = 5V, IC = 1mA, f = 100MHz 100 160 – MHz
VCB = 5V, IE = 0, f = 1MHz – 1.7 3.0 pF
VCE = 5V, IC = 100µA, RS = 10kΩ,
f = 10Hz to 15.7MHz
VCE = 5V, IC = 100µA, RS = 1.0kΩ,
f = 100Hz
– 0.5 1.5 dB
– 4.0 – dB
.135 (3.45) Min
Seating Plane
.021 (.445) Dia Max
.100 (2.54)
.105 (2.67) Max
.205 (5.2) Max
E B C
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
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