NTE NTE47 Datasheet

Absolute Maximum Ratings:

NTE47

Silicon NPN Transistor

High Gain, Low Noise Amp

Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Total Device Dissipation (T

CEO

CBO

EBO

C

= +25°C), P

A

D

Derate above 25°C 12mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature Range, T
Storage Temperature Range, T

stg

Thermal Resistance, Junction–to–Case, R

J

thJC

Thermal Resistance, Junction–to–Ambient (Note 1), R
Note 1 R

Electrical Characteristics

OFF Characteristics

Collector–Emitter Breakdown Voltage V
Colletor–Base Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I
ON Characteristics (Note 2)

is measured with the device soldered into a typical printed circuit board.

thJA

: (TA = +25°C unless otherwise noted)

Parameter Symbol Test Conditions Min Typ Max Unit

(BR)CEOIC
(BR)CBOIC
(BR)EBOIE

CBO

= 10mA, IB = 0, Note 2 45 – – V
= 100µA, IE = 0 45 – – V
= 10µA, IC = 0 6.5 – – V

VCB = 30V, IE = 0 – 1.0 50 nA

thJA

45V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

45V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

6.5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

200mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

625mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

83.3°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

200°C/W. . . . . . . . . . . . . . . . . . . . . . . . . .

DC Current Gain h

Collector–Emitter Saturation Voltage V

Base–Emitter ON Voltage V

FE

CE(sat)IC

BE(on)

VCE = 5V, IC = 10µA 400 580 –
VCE = 5V, IC = 100µA 500 850 –
VCE = 5V, IC = 1mA 500 1100 –
VCE = 5V, IC = 10mA 500 1150 –

= 10mA, IB = 0.5mA – – 0.2 V
IC = 50mA, IB = 0.5mA – 0.08 0.3 V
VCE = 5V, IC = 1mA – 0.6 0.7 V

Note 2 Pulse test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%

Electrical Characteristics: (TA = +25°C unless otherwise noted)

Parameter Symbol Test Conditions Min Typ Max Unit

Small–Signal Characteristics

Current Gain–Bandwidth Product f
Output Capaciatnce C
Noise Figure

.210

(5.33)

Max

.500

(12.7)

Min

obo

NF

T

VCE = 5V, IC = 1mA, f = 100MHz 100 160 – MHz
VCB = 5V, IE = 0, f = 1MHz – 1.7 3.0 pF
VCE = 5V, IC = 100µA, RS = 10kΩ,

f = 10Hz to 15.7MHz
VCE = 5V, IC = 100µA, RS = 1.0kΩ,

f = 100Hz

– 0.5 1.5 dB

– 4.0 – dB

.135 (3.45) Min

Seating Plane

.021 (.445) Dia Max

.100 (2.54)

.105 (2.67) Max

.205 (5.2) Max

E B C

.050 (1.27)

.165

(4.2)

Max

.105 (2.67) Max