NTE NTE468 Datasheet

Silicon N–Channel JFET Transistor

Chopper, High Speed Switch

Applications:

D Analog Switches
D Choppers
D Commutators

Absolute Maximum Ratings:

Drain–Source Voltage, V
Drain–Gate Voltage, V
Gate Current, I

G

Total Device Dissipation (T

Derate Above 25°C 5.68mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature Range, T
Storage Temperature Range, T
Lead Temperature (During Soldering), T

DS

DG

= +25°C), P

A

D

stg

L

NTE468

J

35V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

35V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

50mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

625mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+300°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Gate–Source Breakdown Voltage V

Gate Reverse Current I
Gate–Source Cutoff Voltage V
Drain Cutoff Current I

ON Characteristics

Zero–Gate Voltage Drain Current I
Static Drain–Source ON Resistance rDS(on) VDS = 0.1V – – 30
Drain–Gate ON Capacitance C
Source–Gate ON Capacitance C
Drain–Gate OFF Capacitance C
Source–Gate OFF Capacitance C

(TA = +25°C unless otherwise specified)

(BR)GS

S

GSS

GS(off)VDS

D(off)

DSS

dg(on)VDS

sg(on)VDS
dg(off)VGS
sg(off)VGS

IG = 1µA, VDS = 0 35 – – V

VGS = –15V, VDS = 0 – – –1.0 nA

= 5V, ID = 1µA –3 – –10 V

VDS = 5V, VGS = –10V – – 1.0 nA

VDS = 15V, VGS = 0, Note 1 20 – – mA

= VGS = 0, f = 1MHz – – 28 pF
= VGS = 0, f = 1MHz – – 28 pF
= –10V, f = 1MHz – – 5 pF
= –10V, f = 1MHz – – 5 pF

Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 3%.

Ω

.210

(5.33)

Max

.135 (3.45) Min

Seating Plane

.500

(12.7)

Min

.100 (2.54)

.021 (.445) Dia Max

D S G

.050 (1.27)

.165

(4.2)

Max

.105 (2.67) Max

.205 (5.2) Max

.105 (2.67) Max