NTE NTE467 Datasheet
Silicon N–Channel JFET Transistor
Ω
Chopper, High Speed Switch
Absolute Maximum Ratings:
Drain–Source Voltage, V
Drain–Gate Voltage, V
Reverse Gate–Source Voltage, V
Forward Gate Current, I
Total Device Dissipation (T
Derate Above 25°C 2.82mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
DS
DG
G(f)
= +25°C), P
A
GSR
D
stg
NTE467
J
30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
310mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Gate–Source Breakdown Voltage V
Gate Reverse Current I
Drain Cutoff Current I
ON Characteristics
Zero–Gate Voltage Drain Current I
Drain–Source ON–Voltage V
Static Drain–Source ON Resistance rDS(on) ID = 1mA, VGS = 0 – – 30
Input Capacitance C
Reverse Transfer Capacitance C
Switching Characteristics
Turn–On Delay Time t
Rise Time t
Turn–Off Delay Time t
Fall Time t
(TA = +25°C unless otherwise specified)
(BR)GSSIG
GSS
D(off)
DSS
DS(on)ID
iss
rss
d(on)
r
d(off)
f
= 10µA, VDS = 0 30 – – V
VGS = –15V, VDS = 0 – – 1.0 nA
VGS = –15V, VDS = 0, TA = +100°C – – 1.0 µA
VDS = 15V, VGS = –12V – – 1.0 nA
VDS = 15V, VGS = –12V, TA = +100°C – – 1.0 µA
VDS = 20V, VGS = 0, Note 1 50 – – mA
= 12mA, VGS = 0 – – 0.5 V
VGS = –12V, VDS = 0, f = 1MHz – – 10 pF
VGS = –12V, VDS = 0, f = 1MHz – – 4 pF
VDD = 10V, V
V
R
RG = 50
GS(off)
= 50Ω
G
= 10V, I
GS(on)
D(on)
= 0,
= 12mA,
– – 4 ns
– – 5 ns
– – 5 ns
– – 10 ns
Ω
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 3%.
.210
(5.33)
Max
.135 (3.45) Min
Seating Plane
.500
(12.7)
Min
.100 (2.54)
.021 (.445) Dia Max
D S G
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
.205 (5.2) Max
.105 (2.67) Max
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