NTE NTE466 Datasheet
NTE466
Silicon N–Channel JFET Transistor
Chopper, High Speed Switch
Absolute Maximum Ratings:
Drain–Source Voltage, V
Drain–Gate Voltage, V
Reverse Gate–Source Voltage, V
Forward Gate Current, I
Total Device Dissipation (T
Derate Above 25°C 2.4mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
DS
DG
G(f)
= +25°C), P
A
GSR
D
stg
40V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
40V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–40V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
360mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +175°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate–Source Breakdown Voltage V
Gate Reverse Current I
Gate–Source Cutoff Voltage V
Drain Cutoff Current I
ON Characteristics
Zero–Gate–Voltage Drain Current I
Drain–Source ON–Voltage V
Small–Signal Characteristics
Drain–Source “ON” Resistance r
Input Capacitance C
Reverse Transfer Capacitance C
Switching Characteristics (Note 2)
Turn–On Delay Time t
Rise Time t
Turn–Off Time t
(BR)GSSIG
GS(off)VDS
D(off)
DS(on)ID
DS(on)
d(on)
GSS
DSS
iss
rss
r
off
= 1A, VDS = 0 –40 – – V
VGS = –20V, VDS = 0 – – 0.25 nA
VGS = –20V, VDS = 0, TA = +150°C – – 0.5 µA
= 15V, ID = 0.5nA –4 – –10 V
VDS = 15V, VGS = –10V – – 0.25 nA
VDS = 15V, VGS = –10V, TA = +150°C – – 0.5 µA
VDS = 15V, VGS = 0, Note 1 50 – – mA
= 20mA, VGS = 0 – – 0.75 V
VGS = 0, ID = 0, f = 1kHz – – 25 Ω
VDS = 0, VGS = –10V, f = 1MHz – – 18 pF
VDS = 0, VGS = –10V, f = 1MHz – – 0.8 pF
VDD = 10V, I
V
GS(on)
= 0, V
D(on)
GS(off)
= 20mA,
= –10V
– – 6 ns
– – 3 ns
– – 25 ns
Note 1. Pulse Test: Pulse Width = 100ms, Duty Cycle ≤ 10%.
Note 2. The I
values are nominal; exact values vary slightly with transistor parameters.
D(on)
.210 (5.33)
Max
.500
(12.7)
Min
.230 (5.84) Dia Max
.195 (4.95) Dia Max
.030 (.762) Max
Source
.018 (0.45)
Drain
Gate
45°
.041 (1.05)
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