NTE NTE465, NTE464 Datasheet

NTE464 (P–Ch) & NTE465 (N–Ch)

Silicon Complementary MOSFET Transistors

Enhancement Mode for Switching Applications

Absolute Maximum Ratings:

Drain–Source Voltage, V
Drain–Gate Voltage, V
Gate–Source Voltage, V
Gate Current, I

G

Total Device Dissipation (T

Derate Above 25°C 1.7mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

DS

DG

GS

= +25°C), P

A

25V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

±30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

30mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

D

300mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Device Dissipation (T

= +25°C), P

C

Derate Above 25°C 4.56mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature, T
Storage Temperature Range, T

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Drain–Source Breakdown Voltage V
Zero–Gate–Voltage Drain Current I

Gate Reverse Current I

ON Characteristics

Gate Threshold Voltage V
Drain–Source On–Voltage V
On–State Drain Current I

stg

(TA = +25°C unless otherwise specified)

(BR)DSXID

D

J

= –10µA, VGS = 0 –25 – – V

DSS

GSS

GS(Th)VDS
DS(on)ID

D(on)

VDS = –10V, VGS = 0, TA = +25°C – – –10 nA
VDS = –10V, VGS = 0, TA = +150°C – – –10 µA
VGS = ±30V, VDS = 0 – – ±10 pA

= –2mA, VGS = –10V – – –1 V

VGS = –10V, VDS = –10V –3 – – mA

800mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+175°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +175°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

= –10V, ID = –10µA –1 – –5 V

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Small–Signal Characteristics

Drain–Source Resistance

NTE464

r

ds(on)

NTE465 – – 300 Ω

Forward Transfer Admittance |yfs| VDS = –10V, ID = 2mA, f = 1kHz 1000 – – µmhos

VGS = –10V, ID = 0, f = 1kHz – – 600 Ω

Input Capacitance C
Reverse Transfer Capacitance C

iss

rss

VDS = –10V, VGS = 0, f = 140kHz
VDS = 0, VGS = 0, f = 140kHz – – 1.3 pF

– – 5 pF

Drain–Substrate Capacitance

NTE464

C

d(sub)

V

D(SUB)

= –10V, f = 140kHz – – 4

NTE465 – – 5 pF

Switching Characteristics

Turn–On Delay t
Rise Time t
Turn–Off Delay t
Fall Time t

d1

d2

ID = –2mA, VDS = –10V, VGS = –10V

r

f

– – 45 ns
– – 65 ns
– – 60 ns
– – 100 ns

.220 (5.58) Dia

.185 (4.7) Dia

.190

(4.82)

.030 (.762)

pF

(12.7)

Source

.500

Min

.018 (0.45) Dia

Gate
Drain

45°

Case

.040 (1.02)