NTE NTE465, NTE464 Datasheet
NTE464 (P–Ch) & NTE465 (N–Ch)
Silicon Complementary MOSFET Transistors
Enhancement Mode for Switching Applications
Absolute Maximum Ratings:
Drain–Source Voltage, V
Drain–Gate Voltage, V
Gate–Source Voltage, V
Gate Current, I
G
Total Device Dissipation (T
Derate Above 25°C 1.7mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DS
DG
GS
= +25°C), P
A
25V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
30mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
300mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
= +25°C), P
C
Derate Above 25°C 4.56mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Drain–Source Breakdown Voltage V
Zero–Gate–Voltage Drain Current I
Gate Reverse Current I
ON Characteristics
Gate Threshold Voltage V
Drain–Source On–Voltage V
On–State Drain Current I
stg
(TA = +25°C unless otherwise specified)
(BR)DSXID
D
J
= –10µA, VGS = 0 –25 – – V
DSS
GSS
GS(Th)VDS
DS(on)ID
D(on)
VDS = –10V, VGS = 0, TA = +25°C – – –10 nA
VDS = –10V, VGS = 0, TA = +150°C – – –10 µA
VGS = ±30V, VDS = 0 – – ±10 pA
= –2mA, VGS = –10V – – –1 V
VGS = –10V, VDS = –10V –3 – – mA
800mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+175°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +175°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= –10V, ID = –10µA –1 – –5 V
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Small–Signal Characteristics
Drain–Source Resistance
NTE464
r
ds(on)
NTE465 – – 300 Ω
Forward Transfer Admittance |yfs| VDS = –10V, ID = 2mA, f = 1kHz 1000 – – µmhos
VGS = –10V, ID = 0, f = 1kHz – – 600 Ω
Input Capacitance C
Reverse Transfer Capacitance C
iss
rss
VDS = –10V, VGS = 0, f = 140kHz
VDS = 0, VGS = 0, f = 140kHz – – 1.3 pF
– – 5 pF
Drain–Substrate Capacitance
NTE464
C
d(sub)
V
D(SUB)
= –10V, f = 140kHz – – 4
NTE465 – – 5 pF
Switching Characteristics
Turn–On Delay t
Rise Time t
Turn–Off Delay t
Fall Time t
d1
d2
ID = –2mA, VDS = –10V, VGS = –10V
r
f
– – 45 ns
– – 65 ns
– – 60 ns
– – 100 ns
.220 (5.58) Dia
.185 (4.7) Dia
.190
(4.82)
.030 (.762)
pF
(12.7)
Source
.500
Min
.018 (0.45) Dia
Gate
Drain
45°
Case
.040 (1.02)
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