NTE NTE46 Datasheet
Darlington, General Purpose Amplifier,
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Total Device Dissipation (T
Derate Above 25°C 5mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CES
CBO
EBO
= +25°C), P
A
NTE46
Silicon NPN Transistor
Preamp, Driver
C
D
100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
500mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
625mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
= +25°C), P
C
D
Derate Above 25°C 12mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
stg
Thermal Resistance, Junction to Case, R
J
Θ
JC
Thermal Resistance, Junction to Ambient, R
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Breakdown
Voltage
Collector–Base Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Voltage I
Emitter Cutoff Current I
(TA = +25°C unless otherwise specified)
V
(BR)CESIC
(BR)CBOIC
(BR)EBOIE
CBO
I
CES
EBO
1.5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
83.3°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Θ
JA
= 100µA, VBE = 0 100 – – V
= 100µA, IE = 0 100 – – V
= 10µA, IC = 0 12 – – V
VCB = 80V, IE = 0 – – 100 nA
VCE = 80V, VBE = 0 – – 500 nA
VBE = 10V, IC = 0 – – 100 nA
200°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain h
FE
IC = 10mA, VCE = 5V 10,000 – –
IC = 100mA, VCE = 5V 10,000 – –
Collector–Emitter Saturation Voltage V
CE(sat)IC
= 10mA, IB = 0.01mA – 0.7 1.2 V
IC = 100mA, IB = 0.1mA – 0.8 1.5 V
Base–Emitter ON Voltage V
BE(on)IC
= 100mA, VCE = 5V – 1.4 2.0 V
Small–Signal Characteristics
Current Gain–Bandwidth Product f
T
IC = 10mA, VCE = 5V,
125 200 – MHz
f = 100MHz, Note 2
Output Capacitance C
obo
VCB = 10V, IE = 0, f = 100kHz – 5.0 8.0 pF
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%
Note 2. f
B
= hfe f
T
test
.135 (3.45) Min
.210
(5.33)
Max
C
.500
(12.7)
Min
E
E B C
.100 (2.54)
Seating Plane
.021 (.445) Dia Max
.105 (2.67) Max
.205 (5.2) Max
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
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