NTE NTE459 Datasheet
NTE459
N–Channel Silicon JFET Transistor
AF Amplifier/Chopper/Switch
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Drain–Source Voltage, V
Drain–Gate Voltage, V
Gate–Source Voltage, V
Drain Current, I
D
Total Device Dissipation (T
Derate Above 25°C 2mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
DS
DG
GS
= +25°C), P
A
D
J
stg
50V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–50V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
300mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+175°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate–Source Breakdown Voltage V
Gate Reverse Current I
Gate–Source Cutoff Voltage V
Gate–Source Voltage V
ON Characteristics
Zero–Gate–Voltage Drain Current I
Small–Signal Characteristics
Forward Transfer Admittance |yfs| VDS = 15V, VGS = 0, f = 1kHz,
Output Admittance |yos| VDS = 15V, VGS = 0, f = 1kHz,
Input Capacitance C
Reverse Transfer Capacitance C
(BR)GSSIG
GSS
GS(off)ID
GS
DSS
iss
rss
= –1µA, VDS = 0 –50 – – V
VGS = –30V, VDS = 0 – – –0.1 nA
VGS = –30V, VDS = 0, TA = +150°C – – –100 nA
= 0.5nA, VDS = 15V – – –6 V
ID = 200µA, VDS = 15V –1 – –4 V
VDS = 15V, VGS = 0, Note 1 2 – 10 mA
Note 1
VDS = 15V, VGS = 0, f = 100MHz 3000 – – µmho
Note 1
VDS = 15V, VGS = 0, f = 1MHz – – 6 pF
VDS = 15V, VGS = 0, f = 1MHz – – 3 pF
Note 1. Pulse Test: Pulse Width ≤ 100ms, Duty Cycle ≤ 10%.
3000 – 6500 µmho
– – 20 µmho
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Functional Characteristics
Noise Figure NF VDS = 15V, VGS = 0, RG = 1MΩ,
f = 10Hz, BW = 5Hz
Equivalent Short–Circuit Input Noise
Voltage
e
VDS = 15V, VGS = 0, f = 10Hz,
n
BW = 5Hz
.220 (5.58) Dia
.185 (4.7) Dia
.190
(4.82)
.030 (.762)
– – 5 dB
– – 200 nV/Hz
1/2
(12.7)
Source
.500
Min
.018 (0.45) Dia
Drain
Gate
45°
Case
.040 (1.02)
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