NTE NTE458 Datasheet
General Purpose, Low Noise, Audio Frequency Amplifier
Features:
D Very Low Noise
D Low Gate Current
NTE458
N–Channel Silicon JFET
Absolute Maximum Ratings:
Gate–Drain Voltage, V
Gate–Source Voltage, V
GDO
GSO
Drain–Source Voltage (V
Drain Current, I
Gate Current, I
D
G
Total Device Dissipation, P
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Gate Reverse Current I
Zero–Gate Voltage Drain Current I
Gate–Source Voltage V
Forward Transconductance g
Input Capacitance C
Reverse Transfer Capacitance C
Noise Frequency NF VDS = 10V, VGS = 0, RG = 1kΩ,
(TA = +25°C unless otherwise specified)
= –2V), V
DS
T
stg
DSX
J
(TA = +25°C unless otherwise specified)
GSS
DSS
GS(off)VDS
VGS = –20V, VDS = 0 – – –1 nA
VDS = 10V, VGS = 0 0.5 3.0 12 mA
= 10V, ID = 10µA –0.13 –0.5 –1.5 V
VDS = 10V, ID = 0.5mA, f = 1kHz 4.0 5.2 – mhos
fs
VDS = 10V, VGS = 0, f = 1MHz 4.0 12 – mhos
VDS = 10V, VGS = 0, f = 1MHz – 13 – pF
iss
VDS = 10V, VGS = 0, f = 1MHz – 2.6 – pF
rss
f = 10Hz
–50V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–50V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
20mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
250mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
– 5.0 10 dB
VDS = 10V, VGS = 0, RG = 1kΩ,
f = 100Hz
VDS = 10V, VGS = 0, RG = 1kΩ,
f = 1kHz
Noise Voltage NV ID = 0.5mA, RG = 1kΩ,
f = 10Hz to 1kHz (at V
= –3dB)
G
– 1.0 3.0 dB
– 0.6 1.5 dB
– 15 20 mV
.210
(5.33)
Max
.135 (3.45) Min
Seating Plane
.500
(12.7)
Min
.100 (2.54)
.021 (.445) Dia Max
D G S
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
.205 (5.2) Max
.105 (2.67) Max
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