Silicon N–Channel JFET Transistor
General Purpose Amp, Switch
Absolute Maximum Ratings:
Drain–Source Voltage, V
Drain–Gate Voltage, V
Reverse Gate–Source Voltage, V
Gate Current, I
G
Total Device Dissipation (T
Derate Above 25°C 2.82mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
Storage Temperature Range, T
DS
DG
= +25°C), P
A
GSR
stg
NTE457
25V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
25V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–25V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
J
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
310mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Gate–Source Breakdown Voltage V
Gate Reverse Current I
Gate–Source Cutoff Voltage V
Gate–Source Voltage V
ON Characteristics
Zero–Gate Voltage Drain Current I
Small–Signal Characteristics
Forward Transfer Admittance
Common Source
Output Admittance Common Source |yos| VDS = 15V, VGS = 0, f = 1kHz,
Input Capacitance C
Reverse Transfer Capacitance C
(TA = +25°C unless otherwise specified)
(BR)GS
S
GSS
GS(off)VDS
GS
DSS
|yfs| VDS = 15V, VGS = 0, f = 1kHz,
IG = –10µA, VDS = 0 –25 – – V
VGS = 15V, VDS = 0 – – –1 mA
VGS = 15V, VDS = 0, TA = +100°C – – –200 mA
= 15V, ID = 10nA –0.5 – –6.0 V
VDS = 15V, ID = 100µA – – –2.5 V
VDS = 15V, VGS = 0, Note 1 1 3 5 mA
Note 1
Note 1
VDS = 15V, VGS = 0, f = 1kHz – 4.5 7.0 pF
iss
VDS = 15V, VGS = 0, f = 1kHz – 1.5 3.0 pF
rss
1000 – 5000 µmhos
– 10 50 µmhos
Note 1. Pulse Test: Pulse Width ≤ 630ms, Duty Cycle ≤ 10%.