NTE NTE454 Datasheet

NTE454

MOSFET, N–Ch, Dual Gate,

TV UHF/RF Amp, Gate Protected

Description:

The NTE454 is a depletion mode dual gate MOSFET transistor designed for VHF amplifier and mixer
applications.

Features:

D Low Reverse Transfer Capacitance – C
D High Forward Transfer Admittance – |y

= 0.03pf (Max)

rss

| = 0–20 mmhos

fe

D Diode Protected Gates

Absolute Maximum Ratings:

Drain Source Voltage, V
Drain–Gate Voltage, V

Gate Current, I

I

G1
G2

Drain Current–Continuous, I
Total Power Dissipation (T

V

DSX

DG1
DG2

D

= +25°C), P

A

D

Derate above 25°C 2.4mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Power Dissipation (T

= +25°C), P

C

D

Derate above 25°C 8.0mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage Channel Temperature Range, T
Junction Temperature Range, T

J

stg

Lead Temperature, 1/16” from Seated Surface for 10 Seconds, T

L

2

Gate 2

3

Gate 1 Source

4

±10mAdc. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

±10mAdc. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

60mAdc. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

360mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.2Watt. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65 to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65 to +175°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1

Drain

20Vdc. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

30Vdc. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

30Vdc. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

300°C. . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics: (TA = 25°C unless otherwise noted)

Characteristics Symbol Test Conditions Min Typ Max Unit

OFF CHARACTERISTICS

Drain–Source Breakdown

V

(BR)DSXID

Voltage

Gate 1= Source Breakdown

V

(BR)G1SOIG1

Voltage (Note 1)

Gate 2–Source Breakdown

V

(BR)G2SOIG2

Voltage (Note 1)

Gate 1 to Source Cutoff Voltage V

Gate 2 to Source Cutoff Voltage V

Gate 1 Leakage Current I

Gate 2 Leakage Current I

GIS(off)

G2S(off)VDS

G1SS

G2SS

ON CHARACTERISTICS

Zero–Gate Voltage Drain

I

Current (Note 2)

SMALL–SIGNAL CHARACTERISTICS

DSS

= 10µAdc, V5 = 0,

= V

V

GIS

= 5.0Vdc

G25

= ±10mAdc, V

= ±10mAdc, V

VDS = 15Vdc, V

= 20µAdc

I

D

= 15Vdc, V

= 20µAdc

I

D

V

= ±5.0Vdc, V

GIS

V

= –5.0Vdc, V

G2S

= 150°C

T

A

V

= ±5.0Vdc, V

G2S

V

= –5.0Vdc, V

G2S

= 150°C

T

A

VDS = 15Vdc, V

= 4.0Vdc

V

G25

20 – – Vdc

= VDS = 0 ±6.0 ±12 ±30 Vdc

GIS

= VD5 = 0 ±5.0 ±12 ±30 Vdc

G15

= 4.0Vdc,

G2S

= 0,

G15

= VDS = 0 – ±0.04 ±10 nAdc

G2S

= VDS = 0,

G2S

= VDS = 0 – ±0.05 ±10 nAdc

GIS

= VDS = 0,

GIS

= 0,

GIS

–0.5 –1.5 –5.0 Vdc

–0.2 –1.4 –5.0 Vdc

– – –10 µAdc

– – –10 µAdc

6.0 13 30

mAdc

Forward Transfer Admittance

(Note 3)

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

|yfe| VDS = 15Vdc, V

= 0, f = 1.0kH

V

GIS

iss

oss

rss

VDS = 15Vdc, V

= I

I

D

, f = 1.0MH

DSS

VDS = 15Vdc, V

= I

I

D

, f = 1.0MH

DSS

VDS = 15Vdc, V

= 10mAdc, f = 1.0MH

I

D

= 4.0Vdc,

G2S

Z

= 4.0Vdc,

G2S

Z

= 4.0Vdc,

G2S

Z

= 4.0Vdc,

G2S

8.0 12.8 20

mmhos

– 3.3 – pF

– 1.7 – pF

0.005 0.014 0.03 pF

Z

FUNCTIONAL CHARACTERISTICS

Noise Figure NF VDD = 18Vdc, VGG = 7.0Vdc,

Common Source Power Gain G

ps

f = 200MH
VDD = 18Vdc, VGG = 7.0Vdc,

f = 200MH

Z

Z

Bandwidth BW VDD = 18Vdc, VGG = 7.0Vdc,

Gain Control Gate Supply

Voltage (Note 4)

V

GG(GC)

f = 200MH
VDD = 18Vdc, ∆Gps = –30dB,

f = 200MH

Z

Z

– 1.8 4.5 dB

15 20 25 dB

5.0 – 9.0 MH

0 –1.0 –3.0 Vdc

Z

Note 1. All gate breakdown voltages are measured while the device is conducting rated gate current. This ensures

that the gate–voltage limiting network is functioning properly.
Note 2. Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%
Note 3. This parameter must be measured with bias voltages supplied for less than 6 seconds to avoid overheating.
Note 4. ∆G

is defined as the change in Gpe from the values at VGG = 7.0V power gain conversion

ps