NTE NTE452 Datasheet
NTE452
Silicon N–Channel JFET Transistor
VHF Amplifier, Mixer
Description:
The NTE452 is a silicon, N–channel junction field effect tranistor (JFET) in a TO72 type package designed to be used in the depletion mode in VHF/UHF amplifiers.
Absolute Maximum Ratings:
Drain–Source Voltage, V
Drain–Gate Voltage, V
Gate–Source Voltage, V
Gate Current, I
G
Total Device Dissipation (T
DS
DG
GS
= +25°C), P
A
D
Derate Above 25°C 1.71mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
stg
J
–65° to +175°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +175°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
35V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
300mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Gate–Source Breakdown Voltage V
Gate Reverse Current I
Gate–Source Cutoff Voltage V
Gate–Source Voltage V
Gate–Source Forward Voltage V
ON Characteristics (Note 1)
Zero–Gate Voltage Drain Current I
Small–Signal Characteristics
Forward Transfer Admittance |Yfs| VDS = 15V, VGS = 0, f = 1kHz, Note 1 4500 – 7500 µmhos
Real Part of Forward Transfer
Admittance
(TA = +25°C unless otherwise specified)
(BR)GSSIG
GSS
GS(off)ID
GS
GS(f)IG
DSS
Y
fs(real)
= 1µs, VDS = 0 30 – – V
VGS = 20V, VDS = 0 – – 100 pA
VGS = 20V, VDS = 0, TA = +150°C – – 200 pA
= 1nA, VDS = 15V – – 6 V
ID = 0.5mA, VDS = 15V 1.0 – 5.5 V
= 1mA, VDS = 0 – – 1.0 V
VDS = 15V, VGS = 0 5 – 15 mA
VDS = 15V, VGS = 0, f = 400MHz 4000 – – µmhos
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 1%.
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Small–Signal Characteristics (Cont’d)
Real Part of Input Admittance Y
is(real)
VDS = 15V, VGS = 0, f = 100MHz – – 100 µmhos
VDS = 15V, VGS = 0, f = 400MHz – – 1000 µmhos
Output Admittance |Yos| VDS = 15V, VGS = 0, f = 1kHz – – 50 µmhos
Real Part of Output Admittance Y
os(real)VDS
= 15V, VGS = 0, f = 100MHz – – 75 µmhos
VDS = 15V, VGS = 0, f = 400MHz – – 100 µmhos
Imaginary Part of Input Admittance Y
is(imag)VDS
= 15V, VGS = 0, f = 100MHz – – 2500 µmhos
VDS = 15V, VGS = 0, f = 400MHz – – 10k µmhos
Imaginary Part of Output
Y
os(imag)VDS
Admittance
Input Capacitance C
Reverse Transfer Capacitance C
Common–Source Output
C
iss
rss
oss
= 15V, VGS = 0, f = 100MHz – – 1000 µmhos
VDS = 15V, VGS = 0, f = 400MHz – – 4000 µmhos
VDS = 15V, VGS = 0, f = 1MHz – – 4.0 pF
VDS = 15V, VGS = 0, f = 1MHz – – 0.8 pF
VDS = 15V, VGS = 0, f = 1MHz – – 2.0 pF
Capacitance
Functional Characteristics
Noise Figure NF VDS = 15V, ID = 5mA, Rg ∼ 1000Ω,
– – 2.0 dB
f = 100MHz
VDS = 15V, ID = 5mA, Rg ∼ 1000Ω,
– – 4.0 dB
f = 400MHz
Small–Signal Power Gain
Common–Source
G
ps
Source
VDS = 15V, ID = 5mA, f = 100MHz 18 – – dB
VDS = 15V, ID = 5mA, f = 400MHz 10 – – dB
.220 (5.58) Dia
.185 (4.7) Dia
.190
(4.82)
.500
(12.7)
Min
.018 (0.45) Dia
.030 (.762)
Drain
Gate
45°
Case
.040 (1.02)
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